The invention provides an electronic device package and fabrication method thereof. The electronic device package includes a sensor chip. An upper surface of the sensor chip comprises a sensing film. A covering plate having an opening structure covers the upper surface of the sensor chip. A cavity is between the covering plate and the sensor chip, corresponding to a position of the sensing film, where the cavity communicates with the opening structure. A spacer is between the covering plate and the sensor chip, surrounding the cavity. A pressure releasing region is between the spacer and the sensing film.

Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

A package includes a base structure, which has an electrically isolating material and/or an electrically conductive contact structure, an electronic component, which is embedded in the base structure or is arranged on the base structure, a microelectromechanical system (MEMS) component, and a cover structure, which is mounted on the base structure for at least partially covering the MEMS component.

In one embodiment, an electronic package structure includes multiple rows of I/O pads and is formed without a flag portion. An electronic device may be attached to a pair of adjacent inner rows of I/O pads. The pair of adjacent inner rows of I/O pads is configured to support, at least in part, the electronic device, and to receive connective structures, such as wire bonds. Connective structures may electrically connect the electronic device to the multiple rows of I/O pads, and an encapsulating layer covers portions of the I/O pads, the electronic device and the connective structures.

An embodiment device package includes a package substrate and a first and a second die bonded to the package substrate. The package substrate includes a build-up portion comprising a first contact pad and a plurality of bump pads. The package substrate further includes an organic core attached to the build-up portion, a through-via electrically connected to the first contact pad and extending through the organic core, a second contact pad on the through-via, a connector on the second contact pad, and a cavity extending through the organic core. The cavity exposes the plurality of bump pads, and the first die is disposed on the cavity and is bonded to the plurality of bump pads.

A semiconductor package having a second semiconductor package or module integrated therein. The semiconductor package of the present invention typically comprises active and passive devices which are each electrically connected to an underlying substrate. The substrate is configured to place such active and passive devices into electrical communication with contacts of the substrate disposed on a surface thereof opposite that to which the active and passive devices are mounted. The module of the semiconductor package resides within a complimentary opening disposed within the substrate thereof. The module and the active and passive devices of the semiconductor package are each fully or at least partially covered by a package body of the semiconductor package.

A semiconductor device is disclosed. The semiconductor device includes: a first die including a signal pad region and a power pad region; a redistribution layer (RDL) over the first die; a plurality of first connectors over the RDL and at a side of the RDL opposite to the first die; a plurality of second connectors over the RDL and at the side opposite to the first die; a second die including a signal pad region and a power pad region, wherein the second die is face-to-face and electrically connected to the first die through the first connectors and the RDL, wherein a center of the second die is laterally shifted with respect to a center of the first die so as to correspond the signal pad region of the first die to the signal pad region of the second die. An associated method for fabricating the same is also disclosed.

A method includes mounting a window substrate to a carrier tape. The window substrate has a window extending between an upper surface of the window substrate and a lower surface of the window substrate, the carrier tape sealing the window at the lower surface. Bond pads on an active surface of a MEMS die are flip chip mounted to terminals on the upper surface of the window substrate, a MEMS active area of the MEMS die being aligned with the window of the window substrate. A magnet is mounted to an inactive surface of the MEMS die.

A semiconductor substrate is provided, including a substrate body having a lateral surface, and a protruding structure extending outward from the lateral surface. The semiconductor substrate distributes stresses generated during a manufacturing process through the protruding structure, and is thus prevented from delamination or being cracked. An electronic package having the semiconductor substrate is also provided.

An electronic element mounting substrate includes a substrate including, on a first upper surface, a mounting region in which an electronic element is mounted, a frame body located on the first upper surface of the substrate and surrounding the mounting region, a channel extending through the frame body outward from an inner wall of the frame body, and an electrode pad located on the first upper surface of the substrate or an inner surface of the frame body. The channel is located above or below the electrode pad.