Patent classifications
H01L2924/15151
Stack of dies
An apparatus including a carrier mount having a staircase of steps in an opening in the carrier mount and a plurality of dies, each one of the dies having at least a portion of an edge of a major surface thereof located on one of the steps corresponding to the one of the dies such that the dies form a stack, major surfaces of the dies being substantially parallel in the stack, each of the dies having one or more electro-optical devices thereon.
SEMICONDUCTOR DEVICES AND RELATED METHODS
In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.
Package structure and method for manufacturing the same
A package structure is provided. The package structure includes a substrate, a sensor device, an encapsulant and a signal blocking structure. The substrate has a signal passing area. The sensor device is disposed over the substrate. The sensor device has a first surface, a second surface opposite to the first surface and a sensing area located at the second surface. The second surface of the sensor device faces the substrate. The encapsulant covers the sensor device and the substrate. The signal blocking structure extends from the substrate into the encapsulant.
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor die, a package substrate and bonding wires. The semiconductor die has I/O pads arranged at an active side. The package substrate is provided with a first side attached to the active side of the semiconductor die and a second side facing away from the semiconductor die, and has an opening penetrating through the package substrate. The I/O pads are overlapped with the opening. A width of the opening at the second side of the package substrate is greater than a width of the opening at the first side of the package substrate. The bonding wires connect the I/O pads to the second side of the package substrate through the opening of the package substrate.
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
A semiconductor package including a semiconductor chip, and a package structure configured to accommodate the semiconductor chip, and a manufacturing method thereof are disclosed. The package structure includes a substrate having one surface and the other surface opposite to the one surface, at least one conductive via extending through one surface and the other surface of the substrate, a wiring layer formed at one surface of the substrate, to transmit an electrical signal, a chip accommodating portion formed through removal of a portion of the substrate from the other surface toward the one surface, and a contact pad connected to the wiring layer and formed to be exposed through the chip accommodating portion. The semiconductor chip is inserted into the chip accommodating portion and is connected to the contact pad. Since the semiconductor chip is mounted after formation of the package structure, yield of the semiconductor package increases.
PACKAGE COMPRISING WIRE BONDS COUPLED TO INTEGRATED DEVICES
A package that includes a substrate comprising a cavity, a first integrated device coupled to the substrate through a first plurality of pillar interconnects and a first plurality of solder interconnects, a second integrated device coupled to the substrate through a second plurality of pillar interconnects and a second plurality of solder interconnects, and a plurality of wire bonds coupled to the first integrated device and the second integrated device, wherein the plurality of wire bonds is located over the cavity of the substrate.
Semiconductor package structure and methods of manufacturing the same
The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.
Ultrasonic probe and ultrasonic measurement apparatus using the same
An ultrasonic probe includes a semiconductor chip in which an ultrasonic transducer is formed and an electrode pad electrically connected to an upper electrode or a lower electrode of the ultrasonic transducer is provided and a flexible substrate in which a bump electrically connected to the electrode pad is provided and the bump is disposed in a portion overlapping with a stepped portion of the semiconductor chip. Further, a height of a connection surface of the electrode pad of the semiconductor chip connected to the bump is lower than a height of a lower surface of the lower electrode.
Semiconductor package structure having an annular frame with truncated corners
A semiconductor package structure includes a substrate having a substrate having a first surface and second surface opposite thereto, wherein the substrate comprises a wiring structure. The structure also has a first semiconductor die disposed on the first surface of the substrate and electrically coupled to the wiring structure, and a second semiconductor die disposed on the first surface and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are arranged in a side-by-side manner. A molding material surrounds the first semiconductor die and the second semiconductor die, wherein the first semiconductor die is separated from the second semiconductor die by the molding material. Finally, an annular frame mounted on the first surface of the substrate, wherein the annular frame surrounds the first semiconductor die and the second semiconductor die.
Memory bandwidth aggregation using simultaneous access of stacked semiconductor memory die
A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.