An electronic device (100) includes a substrate (110) and an integrated circuit (120) provided on the substrate (110) having a surface facing away from the substrate (110). An insulating layer (150) extends over the substrate (110) and around the integrated circuit (120) to define an interface (154) between the insulating layer (150) and the integrated circuit (120). An electrically conductive via (130) is provided on the surface of the integrated circuit (120). An insulating material (140) extends over the via (130) and includes an opening (142) exposing a portion of the via (130). A repassivation member (162) extends over the insulating layer (150) and has a surface (164) aligned with the interface (154). An electrically conductive redistribution member (181) is electrically connected to the via (130) and extends over the repassivation member (162) into contact with the insulating layer (150).

In accordance with an embodiment, sensor structure has a first, second, and third laminated structures. The second laminated structure is positioned between the first laminated structure and the third laminated structure. The first laminated structure includes a first portion of a first sensing element and the third laminated structure includes a second portion of the first sensing element. The second laminated structure includes spacer elements that can be used to adjust the sensitivity of the sensor structure.

A package module includes a core structure including a frame having a penetrating portion, an electronic component disposed in the penetrating portion, and an insulating material covering at least a portion of each of the frame and the electronic component and filling at least a portion of the penetrating portion. The core structure further has a recessed portion in which a stopper layer is disposed on a bottom surface of the recessed portion. A semiconductor chip has a connection pad and is disposed in the recessed portion such that an inactive surface faces the stopper layer. An encapsulant covers at least a portion of each of the core structure and the semiconductor chip, and fills at least a portion of the recessed portion. An interconnect structure is disposed on the core structure and an active surface of the semiconductor chip, and includes a redistribution layer.

A semiconductor package structure includes a circuit build-up substrate, a chip, a plurality of conductive pillar, a molding layer and at least a memory module. The circuit build-up substrate has a first surface. A plurality of flip-chip bonding pads and a plurality of first bonding pads are exposed from the first surface. The chip is electrically connected to the flip-chip bonding pads. The conductive pillars are disposed on the first surface of the circuit build-up substrate and electrically connected to the first bonding pads. The molding layer is disposed on the first surface of the circuit build-up substrate to cover the chip and the conductive pillars. A second side of the chip and a first end of each conductive pillar are exposed from the molding layer. The memory module is disposed on the molding layer and electrically connected to the first end of the conductive pillar.

An electronic device may include a semiconductor die. The electronic device may include a first routing layer. The first routing layer may be coupled to the semiconductor die. A first plurality of routing traces may be in electrical communication with the semiconductor die. The first plurality of routing traces may be positioned within a first routing footprint. The first routing footprint may have a width greater than a width of the semiconductor die.

A second routing layer may be coupled to the first routing layer. A second plurality of routing traces may be in electrical communication with the first plurality of routing traces. The second plurality of routing traces may be positioned within a second routing footprint. The second routing footprint may have a width greater than the width of the first routing footprint.

RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

Semiconductor packages and methods of forming the same are provided. One of the semiconductor package includes a first die, a dummy die, a first redistribution layer structure, an insulating layer and an insulating layer. The dummy die is disposed aside the first die. The first redistribution layer structure is electrically connected to the first die and having connectors thereover. The insulating layer is disposed over the first die and the dummy die and opposite to the first redistribution layer structure. The insulating layer penetrates through the insulating layer.

An apparatus is provided comprising: first die, wherein a first plurality of interconnect structures is formed on the first die; one or more layers, wherein a first surface of the one or more layers is attached to the first plurality of interconnect structures; a second plurality of interconnect structures formed on a second surface of the one or more layers; and a second die, wherein a third plurality of interconnect structures is formed on the second die, wherein a first interconnect structure of the first plurality of interconnect structures is electrically connected to a second interconnect structure of the second plurality of interconnect structures through the one or more layers, and wherein the first die is mounted on the second die such that the second interconnect structure of the second plurality of interconnect structures is attached to a third interconnect structure of the third plurality of interconnect structures.

An electronic device may include a semiconductor die. The electronic device may include a first routing layer. The first routing layer may be coupled to the semiconductor die. A first plurality of routing traces may be in electrical communication with the semiconductor die. The first plurality of routing traces may be positioned within a first routing footprint. The first routing footprint may have a width greater than a width of the semiconductor die. A second routing layer may be coupled to the first routing layer. A second plurality of routing traces may be in electrical communication with the first plurality of routing traces. The second plurality of routing traces may be positioned within a second routing footprint. The second routing footprint may have a width greater than the width of the first routing footprint.

Generally discussed herein are systems, devices, and methods that include a communication cavity. According to an example a device can include a substrate with a first cavity formed therein, first and second antennas exposed in and enclosed by the cavity, and an interconnect structure formed on the substrate, the interconnect structure including alternating conductive material layers and inter-layer dielectric layers.