A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

Package on package structures and manners of formation are described. In an embodiment, an array of trenches is formed partially through a fan-out substrate. In an embodiment, a plurality of laterally separate locations thermal interface material is dispensed onto an array of embedded bottom die. In an embodiment a thermal compression tool including an array of cavities corresponding to an array of top packages is brought into contact with the array of top packages and underlying fan-out substrate during PoP joint formation. The fan-out substrate may be secured to a vacuum chuck during several processing operations.

A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor wafer is singulated to separate the die. The semiconductor die is mounted to a temporary carrier with the ACF oriented to the carrier. The semiconductor die is forced against the carrier to compress the ACF under the bumps and form a low resistance electrical interconnect to the bumps. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected through the compressed ACF to the bumps. The ACF reduces shifting of the semiconductor die during encapsulation.

A bonded assembly includes a first package structure including first metallic bump structures and a first polymer bonding layer laterally surrounding the first metallic bump structures; a second package structure including second metallic bump structures and a second polymer bonding layer laterally surrounding the second metallic bump structures; and solder material portions located between the first metallic bump structures and the second metallic bump structures. Each of the solder material portions is bonded to a respective one of the first metallic bump structures and a respective one of the second metallic bump structures, and the second polymer bonding layer is bonded to the first polymer bonding layer through polymer-to-polymer bonding.

An electronic assembly component may comprise at least one fan-out device comprising a first encapsulant disposed around a memory device or function and a processor device or function, and a fan-out interconnect structure disposed over the first encapsulant and the at least one fan-out device. Input output pads may be disposed over the fan-out interconnect structure. A structural support may comprise electrical routing and structural support pads, the structural support further comprising at least one mounting site to which the at least one fan-out device is coupled. An electrical connector may be configured to electrically couple the input output pads of the at least one fan-out device to the structural support pads. A second encapsulant may be disposed over at least a portion of the at least one fan-out device and the structural support.

Devices and method for forming a chip package structure including at least one semiconductor die attached to a redistribution structure, a molding compound die frame laterally surrounding the at least one semiconductor die, and a first underfill material portion located between the redistribution structure and the at least one semiconductor die and contacting sidewalls of the at least one semiconductor die and sidewalls of the molding compound die frame. The first underfill material portion may include at least one cut region, in which the first underfill material portion may include a vertically-extending portion having a uniform lateral width and a horizontally-extending portion having a uniform vertical thickness and adjoined to a bottom end of the vertically-extending portion within each of the at least one cut region.

An artificial intelligence (AI) chip includes a circuit substrate, a routing layer, and a system-on-chip (SOC). The routing layer is formed on a surface of the circuit substrate and includes multiple bump pads and multiple traces connecting SOC PHY bumps and substrate bumps. The disclosure utilizes advanced packaging to increase the number of signal lines, prompting appropriate changes in SOC planning to meet requirements of modern AI chips for high capacity and bandwidth, while effectively controlling costs. The SOC includes several DRAM interface physical structures (PHY), and the DRAM interface PHYs are electrically coupled to external devices through the routing layer to simultaneously receive signals from the external devices. The routing layer may be a fanout circuit layer.

Devices and method for forming a chip package structure including at least one semiconductor die attached to a redistribution structure, a molding compound die frame laterally surrounding the at least one semiconductor die, and a first underfill material portion located between the redistribution structure and the at least one semiconductor die and contacting sidewalls of the at least one semiconductor die and sidewalls of the molding compound die frame. The first underfill material portion may include at least one cut region, in which the first underfill material portion may include a vertically-extending portion having a uniform lateral width and a horizontally-extending portion having a uniform vertical thickness and adjoined to a bottom end of the vertically-extending portion within each of the at least one cut region.