Patent classifications
H01L2924/15182
Stacked semiconductor die assemblies with support members and associated systems and methods
Stacked semiconductor die assemblies with support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a plurality of support members also attached to the package substrate. The plurality of support members can include a first support member and a second support member disposed at opposite sides of the first semiconductor die, and a second semiconductor die can be coupled to the support members such that at least a portion of the second semiconductor die is over the first semiconductor die.
STACKED SEMICONDUCTOR DIE ASSEMBLIES WITH SUPPORT MEMBERS AND ASSOCIATED SYSTEMS AND METHODS
Stacked semiconductor die assemblies with support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a plurality of support members also attached to the package substrate. The plurality of support members can include a first support member and a second support member disposed at opposite sides of the first semiconductor die, and a second semiconductor die can be coupled to the support members such that at least a portion of the second semiconductor die is over the first semiconductor die.
STACKING MULTIPLE DIES HAVING DISSIMILAR INTERCONNECT STRUCTURE LAYOUT AND PITCH
An apparatus is provided comprising: first die, wherein a first plurality of interconnect structures is formed on the first die; one or more layers, wherein a first surface of the one or more layers is attached to the first plurality of interconnect structures; a second plurality of interconnect structures formed on a second surface of the one or more layers; and a second die, wherein a third plurality of interconnect structures is formed on the second die, wherein a first interconnect structure of the first plurality of interconnect structures is electrically connected to a second interconnect structure of the second plurality of interconnect structures through the one or more layers, and wherein the first die is mounted on the second die such that the second interconnect structure of the second plurality of interconnect structures is attached to a third interconnect structure of the third plurality of interconnect structures.
Power supply circuit and related methods for generating a power supply voltage in a semiconductor package
A power supply circuit includes a first comparator, a second comparator, a first voltage regulator, an output terminal, a first path and a second path. The first comparator compares a first input voltage with a first reference voltage to generate a first control signal. The second comparator compares a second input voltage with the first reference voltage to generate a second control signal. A voltage level of the second input voltage is different from a voltage level of the first input voltage. The first voltage regulator is selectively enabled based on the first control signal and the second control signal, and generates a first voltage based on the first input voltage. A voltage level of the first voltage is substantially the same as the voltage level of the second input voltage. The output terminal is configured to output one of the second input voltage and the first voltage as a power supply voltage. The first path directly provides the first input voltage to the first voltage regulator. The second path directly provides the second input voltage to the output terminal. The second input voltage bypasses the first voltage.
DIE WITH EMBEDDED COMMUNICATION CAVITY
Generally discussed herein are systems, devices, and methods that include a communication cavity. According to an example a device can include a substrate with a first cavity formed therein, first and second antennas exposed in and enclosed by the cavity, and an interconnect structure formed on the substrate, the interconnect structure including alternating conductive material layers and inter-layer dielectric layers.
Protection of wire-bond ball grid array packaged integrated circuit chips
A chip includes a substrate having a first surface and a second surface opposite the first surface, and an integrated circuit mounted on a landing zone on the first surface of the substrate. The chip also includes contacts provided about the first surface in the peripheral region, and wire-bonds providing electrical connections between the integrated circuit and the contacts. The chip further includes solder ball connections provided in the peripheral region on the second surface, and connections provided in the substrate for connecting the electrical contacts on the first surface with the solder ball connections on the second surface. The substrate includes at least one conductive track routed through the landing zone region of the substrate, and the chip is configured such that an alteration in the at least one conductive track prevents operation of the integrated circuit.
POWER SUPPLY CIRCUIT AND RELATED METHODS FOR GENERATING A POWER SUPPLY VOLTAGE IN A SEMICONDUCTOR PACKAGE
A power supply circuit includes a first comparator, a second comparator, a first voltage regulator, an output terminal, a first path and a second path. The first comparator compares a first input voltage with a first reference voltage to generate a first control signal. The second comparator compares a second input voltage with the first reference voltage to generate a second control signal. A voltage level of the second input voltage is different from a voltage level of the first input voltage. The first voltage regulator is selectively enabled based on the first control signal and the second control signal, and generates a first voltage based on the first input voltage. A voltage level of the first voltage is substantially the same as the voltage level of the second input voltage. The output terminal is configured to output one of the second input voltage and the first voltage as a power supply voltage. The first path directly provides the first input voltage to the first voltage regulator. The second path directly provides the second input voltage to the output terminal. The second input voltage bypasses the first voltage.
FILM SENSORS ARRAY AND METHOD
In accordance with an embodiment, sensor structure has a first, second, and third laminated structures. The second laminated structure is positioned between the first laminated structure and the third laminated structure. The first laminated structure includes a first portion of a first sensing element and the third laminated structure includes a second portion of the first sensing element. The second laminated structure includes spacer elements that can be used to adjust the sensitivity of the sensor structure.
FLIP-CHIP, FACE-UP AND FACE-DOWN CENTERBOND MEMORY WIREBOND ASSEMBLIES
A microelectronic assembly can include a substrate having first and second surfaces and an aperture extending therebetween, the substrate having terminals. The assembly can also include a first microelectronic element having a front surface facing the first surface of the substrate, a second microelectronic element having a front surface facing the first microelectronic element and projecting beyond an edge of the first microelectronic element, first and second leads electrically connecting contacts of the respective first and second microelectronic elements to the terminals, and third leads electrically interconnecting the contacts of the first and second microelectronic elements. The contacts of the first microelectronic element can be exposed at the front surface thereof adjacent the edge thereof. The contacts of the second microelectronic element can be disposed in a central region of the front surface thereof. The first, second, and third leads can have portions aligned with the aperture.
Semiconductor package
A semiconductor package includes a semiconductor chip on a first redistribution substrate, a molding layer that covers the semiconductor chip, and a second redistribution substrate on the molding layer and that includes a dielectric layer, a redistribution pattern, and a conductive pad. The dielectric layer includes a lower opening that exposes the conductive pad, and an upper opening connected to the lower opening and that is wider than the lower opening. The semiconductor package also comprises a redistribution pad on the conductive pad and that covers a sidewall of the lower opening and a bottom surface of the upper opening. A top surface of the dielectric layer is located at a higher level than a top surface of the redistribution pad. The top surface of the redistribution pad is located on the bottom surface of the upper opening.