A chip and a packaging method thereof. In the chip, first solder pads in a first solder pad array on a first substrate are attached to corresponding second pins in second pin arrays on different dies to implement short-distance and high-density interconnection of the different dies. A molding body is used to wrap a first pin, a second pin, a first solder pad, and the first substrate, so that a fan-out unit and the first substrate are molded into an integral structure. In the integral structure, bottoms of first pins that are in a first pin array on a die and that are electrically connected to a periphery of the chip are not wrapped by the molding body.

A component carrier which includes a laminated stack having at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, and a component having at least one electrically conductive connection structure and embedded in the stack, wherein the at least one electrically conductive connection structure of the component is exposed with respect to the stack so that a free exposed end of the at least one electrically conductive connection structure of the component is flush with or extends beyond an exterior main surface of the stack.

A method includes bonding a first and a second package component on a top surface of a third package component, and dispensing a polymer. The polymer includes a first portion in a space between the first and the third package components, a second portion in a space between the second and the third package components, and a third portion in a gap between the first and the second package components. A curing step is then performed on the polymer. After the curing step, the third portion of the polymer is sawed to form a trench between the first and the second package components.

A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

An embodiment method of forming a package-on-package (PoP) device includes temporarily mounting a substrate on a carrier, stacking a first die on the substrate, at least one of the die and the substrate having a coefficient of thermal expansion mismatch relative to the carrier, and stacking a second die on the first die. The substrate may be formed from one of an organic substrate, a ceramic substrate, a silicon substrate, a glass substrate, and a laminate substrate.

The present disclosure, in some embodiments, relates to a semiconductor structure. The semiconductor structure includes a substrate and a first conductive pad arranged over the substrate. A boundary structure is on an upper surface of the substrate around the first conductive pad. The boundary structure has one or more sidewalls defining an opening with a round shape over the first conductive pad.

A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.

The present disclosure relates to an integrated antenna structure. The integrated antenna structure includes a radiator and a ground plane disposed between a semiconductor substrate and the radiator. A conductive structure is separated from the ground plane by the semiconductor substrate. The conductive structure is electrically coupled to the ground plane. The semiconductor substrate has a thickness of less than approximately 100 microns.

An interposer comprises a semiconductor material and includes cache memory under a location on the interposer for a host device. Memory interface circuitry may also be located under one or more locations on the interposer for memory devices. Microelectronic device assemblies incorporating such an interposer and comprising a host device and multiple memory devices are also disclosed, as are methods of fabricating such microelectronic device assemblies.

An interposer-type component carrier includes a stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure; a cavity formed in an upper portion of the stack; an active component embedded in the cavity and having at least one terminal facing upwards; and a redistribution structure having only one electrically insulating layer structure above the component. A method of manufacturing an interposer-type component carrier is also disclosed.