The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure has a first conductive layer on a first substrate and a second conductive layer on a second substrate. A bonding structure is disposed between the first conductive layer and the second conductive layer. A support structure is disposed between the first substrate and the second substrate. A passivation layer covers a bottom surface of the first conductive layer and has a lower surface facing an uppermost surface of the support structure.

Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

A semiconductor package includes a first interposer, a second interposer, and a gap between the first interposer and the second interposer. The first interposer and the second interposer are coplanar. A first die is mounted on the first interposer and the second interposer. The first die includes first connection elements connecting the first die to the first interposer or the second interposer. A redistribution layer (RDL) structure is disposed on bottom surfaces of the first and second interposers for connecting the first interposer with the second interposer. The RDL structure includes at least one bridge trace traversing the gap to electrically connect the first interposer with the second interposer.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Embodiments of the present disclosure are directed towards techniques and configurations for designing and assembling a die capable of being adapted to a number of different packaging configurations. In one embodiment an integrated circuit (IC) die may include a semiconductor substrate. The die may also include an electrically insulative material disposed on the semiconductor substrate; a plurality of electrical routing features disposed in the electrically insulative material to route electrical signals through the electrically insulative material; and a plurality of metal features disposed in a surface of the electrically insulative material. In embodiments, the plurality of metal features may be electrically coupled with the plurality of electrical routing features. In addition, the plurality of metal features may have an input/output (I/O) density designed to enable the die to be integrated with a plurality of different package configurations. Other embodiments may be described and/or claimed.

Integrated component packages and methods of assembling integrated component packages are provided. The integrated component package can comprise a bump pitch relaxing layer. A high-bandwidth memory component directly mechanically coupled to the bump pitch relaxing layer on a first side of the bump pitch relaxing layer via a first set of bump bond connections. The high-bandwidth memory component directly electrically coupled to the bump pitch relaxing layer on the first side of the bump pitch relaxing layer via the first set of bump bond connections. The bump pitch relaxing layer mechanically coupled to a first side of a substrate via second set of bump bond connections. The high-bandwidth memory component electrically coupled to the substrate via the bump-pitch relaxing layer and the second set of bump bond connections, and a bump pitch of the second set of bump bond connections is larger than the first set of bump bond connections.

Some embodiments of the present disclosure relate to an integrated circuit. The integrated circuit has a first semiconductor die and a second semiconductor die. The first semiconductor die is bonded to the second semiconductor die by one or more bonding structures. A first plurality of support structures are disposed between the first semiconductor die and the second semiconductor die. The first plurality of support structures are spaced apart from the one or more bonding structures. The first plurality of support structures are configured to hold together the first semiconductor die and the second semiconductor die.

In accordance with an embodiment a method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.

3D semiconductor device including: a first level including first single-crystal transistors; a plurality of memory control circuits formed from at least a portion of the first single-crystal transistors; a first metal layer disposed atop the first single-crystal transistors; a second metal layer disposed atop the first metal layer; a second level disposed atop the second metal layer includes second transistors and a memory array of first memory cells; a third level including second memory cells which include some third transistors, which themselves include a metal gate and is disposed above the second level; a third metal layer disposed above the third level; a fourth metal layer disposed above the third metal layer; a connective path from the third metal layer to the second metal layer with a thru second level via of a diameter less than 800 nm which also passes thru the memory array, memory control circuits for wear leveling.

A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where each of the first transistors includes a single crystal channel; first metal layers interconnecting at least the first transistors; a second metal layer overlaying the first metal layers; and a second level including a second single crystal layer, the second level including second transistors and at least one third metal layer, where the second level overlays the first level, where at least one of the second transistors includes a transistor channel, where the second level includes a plurality of DRAM memory cells, where each of the plurality of DRAM memory cells includes at least one of the second transistors, where the second level is directly bonded to the first level, and where the bonded includes metal to metal bonds.