A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing fast throughput die handling for synchronous multi-die testing. For instance, there is disclosed in accordance with one embodiment a device handler for testing functional silicon devices, the device handler including: a plurality of test interface units to electrically interface to the functional silicon devices for test; a plurality of thermal actuators, each being individually movable upon at least three axes; an optical alignment unit with a plurality of pick and place head pairs, in which the optical alignment unit is to move upon a horizontal plane and is to move between the plurality of test interface units and the plurality of thermal actuators; an upward facing camera to move with the optical alignment unit, the upward facing camera to optically locate a position of the plurality of test interface units; a plurality of downward facing cameras, each to optically locate a position of one of the plurality of functional silicon devices to be tested upon one of the plurality of thermal actuators; in which the device handler is to move the optical alignment unit out from between the plurality of test interface units and the plurality of thermal actuators; and in which the device handler is to align test probes affixed to the test interface units with the plurality of functional silicon devices to be tested and electrically interface the test probes with the functional silicon devices for testing. Other related embodiments are disclosed.

A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming a first metal layer on top of first level; forming a second metal layer on top of the first metal layer; forming at least one second level above the second metal layer; performing a first lithography step on the second level; forming a third level on top of the second level; performing a second lithography step on the third level; perform processing steps to form first memory cells within the second level and second memory cells within the third level, where first memory cells include at least one second transistor, and the second memory cells include at least one third transistor; and deposit a gate electrode for the second and the third transistors simultaneously.

A 3D semiconductor device including: a first single crystal layer including a plurality of first transistors and a first metal layer, where a second metal layer is disposed atop the first metal layer; a plurality of logic gates including the first metal layer and first transistors; a plurality of second transistors disposed atop the second metal layer; a plurality of third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, where the memory array includes at least four memory mini arrays, where each of the mini arrays includes at least two rows by two columns of memory cells, where each memory cell includes one of the second transistors or one of the third transistors, and where one of the second transistors is self-aligned to one of the third transistors, being processed following a same lithography step.

A packaging substrate is provided, which includes: an insulating layer; a plurality of conductive bumps formed on the insulating layer, wherein each of the conductive bumps has a post body exposed from the insulating layer and a conductive pad embedded in the insulating layer, the post body being integrally formed with and less in width than the conductive pad; and a plurality of conductive posts disposed on the conductive pads and embedded in the insulating layer. As such, a semiconductor chip can be bonded to the packaging substrate through the conductive bumps. The present disclosure further provides a method for fabricating the packaging substrate.

A 3D semiconductor device, the device including: a first level including a first single crystal layer and first single crystal transistors; a first metal layer; a second metal layer disposed atop the first metal layer; second transistors disposed atop of the second metal layer; third transistors disposed atop of the second transistors, where at least one of the third transistors includes at least one replacement gate, being processed to replace a non-metal gate material with a metal based gate, and where a distance from at least one of the third transistors to at least one of the first transistors is less than 2 microns.

A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a second metal layer overlaying said first metal layers; and a second level comprising a second single crystal layer, said second level comprising second transistors, wherein said second level overlays said first level, wherein at least one of said first transistors controls power delivery for at least one of said second transistor, wherein said second level is directly bonded to said first level, and wherein said bonded comprises direct oxide to oxide bonds.

A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where the second level is bonded to the first level, where the bonded includes oxide to oxide bonds, where the second transistors each include at least two side-gates, and where through the first metal layers power is provided to at least one of the second transistors.

A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

In various embodiments, a chip card module for a chip card is provided. The chip card module may include a carrier with a first side and an opposite second side, a chip arranged over the first side of the carrier, an antenna arranged over the carrier. The antenna may be electrically conductively coupled to the chip and configured to inductively couple to a second antenna formed on a chip card body of the chip card. The chip card module may further include a capacitor electrically conductively coupled to the chip, the capacitor including a first electrode arranged over the first side of the carrier, and a second electrode arranged over the second side of the carrier.