A module includes a substrate including a first surface, at least one first component mounted on the first surface, a shield member mounted on the first surface to cover the first component, and a first sealing resin arranged at least between the shield member and the first surface. The shield member includes a top surface portion in a form of a plate and a plurality of leg portions that extend from the top surface portion toward the first surface.

A semiconductor package includes a first semiconductor chip on a substrate, a second semiconductor chip on the substrate and spaced apart from the first semiconductor device, a mold layer on the substrate and covering sides of the first and second semiconductor chips, and an image sensor unit on the first and second semiconductor chips and the mold layer. The image sensor unit is electrically connected to the first semiconductor chip.

A semiconductor device has a substrate and a first semiconductor die disposed over the substrate. A subpackage is also disposed over the substrate. A stiffener is disposed over the substrate around the first semiconductor die and subpackage. A heat spreader is disposed over the stiffener. The heat spreader is thermally coupled to the first semiconductor die. The heat spreader has an opening over the subpackage.

A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.

A package structure includes a circuit substrate, a package element and a molding layer. The package element is disposed on the circuit substrate and is electrically connected with the circuit substrate. The molding layer is disposed over the circuit substrate and covers at least a top surface of the circuit substrate. The molding layer includes a first portion wrapping around sidewalls of the package element and having a first thickness, and a second portion surrounding the first portion and connected with the first portion. The first thickness of the first portion is larger than a second thickness of the second portion. A top surface of the first portion of the molding layer is higher than a top surface of the package element.

A high-frequency package includes a radio wave shielding portion that shields radio waves radiated from a high-frequency component, a radio wave absorber that is arranged facing the high-frequency component and that absorbs the radio waves, and an adjusting means that enables adjustment of distance from the radio wave absorber to the high-frequency component by adjusting a position of the radio wave absorber with respect to the radio wave shielding portion.

Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.

A MEMS transducer package (1) comprises a semiconductor die element (3) and a cap element (23). The semiconductor die element (3) and cap element (23) have mating surfaces (9, 21). The semiconductor die element (3) and cap element (23) are configured such that when the semiconductor die element (3) and cap element (4) are conjoined, a first volume (7, 27) is formed through the semiconductor die element (3) and into the semiconductor cap element (23), and an acoustic channel is formed to provide an opening between a non-mating surface (11) of the semiconductor die element (3) and either a side surface (10, 12) of the transducer package or a non-mating surface (29) of the cap element (23).

A MEMS transducer package (1) is provide having a semiconductor die portion (3) with a thickness bounded by a first surface (9) and an opposite second surface (11). The package further has a transducer element (13) incorporated in the second surface (11) and a die back volume (7) that extends through the thickness of the semiconductor die portion (3) between the first surface (9) and the transducer element (13). The package is completed by a cap portion (23) that abuts the semiconductor die portion (3) at the first surface (9).

Disclosed herein are integrated circuit (IC) packages with asymmetric adhesion material regions, as well as related methods and devices. For example, in some embodiments, an IC package may include a solder thermal interface material (STIM) between a die of the IC package and a lid of the IC package. The lid of the IC package may include an adhesion material region, in contact with the STIM, that is asymmetric with respect to the die.