According to various aspects, exemplary embodiments are disclosed of thermal interface materials, electronic devices, and methods for establishing thermal joints between heat spreaders or lids and heat sources. In exemplary embodiments, a method of establishing a thermal joint for conducting heat between a heat spreader and a heat source of an electronic device generally includes positioning a thermal interface material (TIM1) between the heat spreader and the heat source.

A semiconductor module includes a main board and external terminals. A package substrate includes a core insulation layer, a conductive pattern disposed in the core insulation layer and electrically connected with the external terminals, an upper insulation pattern and a lower insulation pattern. At least one semiconductor chip is disposed on an upper surface of the package substrate and is electrically connected with the conductive pattern. A shielding plate is disposed on a molding member and lateral side surfaces of the package substrate and shields electromagnetic interference (EMI) emitted from the semiconductor chip. A shielding fence extends from an edge portion of a lower surface of the lower insulation pattern and directly contacts the upper surface of the main board. The shielding fence surrounds the external terminals and shields EMI emitted from the external terminals. A reinforcing member increases a strength of the shielding fence.

Semiconductor device includes circuit substrate, first semiconductor die, thermal interface material, package lid. First semiconductor die is disposed on and electrically connected to circuit substrate. Thermal interface material is disposed on first semiconductor die at opposite side of first semiconductor die with respect to circuit substrate. Package lid extends over first semiconductor die and is bonded to the circuit substrate. Package lid includes roof, footing, and island. Roof extends along first direction and second direction perpendicular to first direction. Footing is disposed at peripheral edge of roof and protrudes from roof towards circuit substrate along third direction perpendicular to first direction and second direction. Island protrudes from roof towards circuit substrate and contacts thermal interface material on first semiconductor die. Island is disconnected from footing along second direction.

One example of a pre-molded lead frame includes a mold body, a plurality of recesses, and a plurality of first leads. The mold body includes a first main surface and a second main surface opposite to the first main surface. Each recess of the plurality of recesses extends from the first main surface into the mold body. The plurality of first leads are coupled to the mold body and extend from a third surface of the mold body. The third surface extends between the first main surface and the second main surface.

A package structure includes a semiconductor device and an adhesive pattern. The adhesive pattern surrounds the semiconductor device, wherein an angle θ is formed between a sidewall of the semiconductor device and a sidewall of the adhesive pattern, 0°<θ<90° wherein the adhesive layer has a first opening misaligned with a corner of the semiconductor device closest to the first opening.

In one example, a semiconductor device can comprise a unit substrate comprising a unit conductive structure and a unit dielectric structure, and an electronic component coupled to the unit conductive structure. The unit substrate can comprise a portion of a singulated subpanel substrate of a panel substrate. Other examples and related methods are also disclosed herein.

A semiconductor package is disclosed. The semiconductor package may include a substrate, a first semiconductor chip on the substrate, an inner mold layer provided on the substrate to at least partially enclose the first semiconductor chip, an inner shielding layer provided on the substrate to at least partially enclose the inner mold layer, a second semiconductor chip stack on the inner shielding layer, an outer mold layer provided on the substrate to at least partially enclose the inner shielding layer and the second semiconductor chip stack, and an outer shielding layer at least partially enclosing the outer mold layer. Each of the inner and outer shielding layers may include a conductive material, and the inner shielding layer may be electrically connected to a ground pad of the substrate.

Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package includes a redistribution substrate that includes a chip region and an edge region around the chip region, and a semiconductor chip on the chip region of the redistribution substrate. The redistribution substrate includes a plurality of dielectric layers that are vertically stacked, a plurality of redistribution patterns on the chip region and in each of the dielectric layers, and a redistribution test pattern on the edge region and at a level the same as a level of at least one of the redistribution patterns.

A 3D semiconductor device including: a first level including a plurality of first metal layers; a second level, where the second level overlays the first level, where the second level includes at least one single crystal silicon layer, where the second level includes a plurality of transistors, where each transistor of the plurality of transistors includes a single crystal channel, where the second level includes a plurality of second metal layers, where the plurality of second metal layers include interconnections between the transistors of the plurality of transistors, and where the second level is overlaid by a first isolation layer; and a connective path between the plurality of transistors and the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, and where the via includes contact with at least one of the plurality of transistors.

A semiconductor device includes: a conductive base substrate; a semiconductor chip mounted on the base substrate and having a signal pad; a frame configured to surround the semiconductor chip, to be mounted on the base substrate, and to include a step having an inner first upper surface and an outer second upper surface higher than the first upper surface in a plan view, wherein a first conductor pattern provided on the first upper surface is electrically connected to the base substrate; a capacitive component mounted on the first conductor pattern; a signal terminal mounted on the second upper surface of the frame; a first bonding wire configured to electrically connect the signal pad and an upper surface of the capacitive component; and a second bonding wire configured to electrically connect the upper surface of the capacitive component and the signal terminal.