H01L2924/16195

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING INTERLAYER INSULATING FILMS HAVING DIFFERENT YOUNGS MODULUS

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

SEMICONDUCTOR PACKAGES INCLUDING ANTENNA PATTERN

A semiconductor package having a thinner shape and including an antenna is provided. A semiconductor package comprises a first substrate, a second substrate on the first substrate and including a first face facing the first substrate and a second face opposite to the first face, a pillar extending from the second face of the second substrate to the first substrate, and a first semiconductor chip on the second face of the second substrate and connected to the pillar. The second substrate may include an antenna pattern, and the antenna pattern may be connected to the first semiconductor chip, and may be on the second face of the second substrate such that the antenna pattern is isolated from direct contact with the first semiconductor chip.

Optical component package and device using same

An optical component package includes a main substrate including a plurality of metal bodies, and a vertical insulation part provided between the metal bodies; a cavity provided in an upper surface of the main substrate; a sub-substrate provided in the cavity of the main substrate, the sub-substrate including an insulating body, a plurality of via holes vertically passing through the insulating body and filled with a metal material being electrically connected to each of the metal bodies, and a plurality of metal pads mounted on the insulating body and electrically connected to the plurality of via holes; a plurality of optical components mounted on the plurality of metal pads and electrically connected to the plurality of metal pads; and a light transmitting member provided above the main substrate.

Double-sided hermetic multichip module

A packaged electronic module for downhole applications, in particular in a petrochemical well or similar environment. The electronic module includes one or more electronic components located on each side of a substrate, where the one or more electronic components are attached to the substrate by means of glue.

PACKAGED TRANSISTOR AMPLIFIERS THAT INCLUDE INTEGRATED PASSIVE DEVICE MATCHING STRUCTURES HAVING DISTRIBUTED SHUNT INDUCTANCES
20220392857 · 2022-12-08 ·

A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

SENSOR LENS ASSEMBLY HAVING NON-SOLDERING CONFIGURATION
20220394845 · 2022-12-08 ·

A sensor lens assembly having a non-soldering configuration is provided. The sensor lens assembly includes a circuit board, an optical module fixed to the circuit board, a sensor chip and an extending wall both assembled to the circuit board, a plurality of wires electrically coupling the sensor chip and the circuit board, a supporting adhesive layer, and a light-permeable sheet. The extending wall surrounds the sensor chip and has an extending top surface that is substantially flush with a top surface of the sensor chip. The supporting adhesive layer is in a ringed shape and is disposed on the extending top surface of the extending wall and the top surface of the sensor chip. The light-permeable sheet is disposed on the supporting adhesive layer, so that the light-permeable sheet, the supporting adhesive layer, and the top surface of the sensor chip jointly define an enclosed space.

Semiconductor package structures and methods of manufacturing the same

A semiconductor package structure includes a carrier, an electronic device, a spacer, a transparent panel, and a conductive wire. The electronic device has a first surface and an optical structure on the first surface. The spacer is disposed on the first surface to enclose the optical structure of the electronic device. The transparent panel is disposed on the spacer. The conductive wire electrically connects the electronic device to the carrier and is exposed to air.

Image sensor semiconductor packages and related methods

An image sensor semiconductor package (package) includes a printed circuit board (PCB) having a first surface and a second surface opposite the first surface. A complementary metal-oxide semiconductor (CMOS) image sensor (CIS) die has a first surface with a photosensitive region and a second surface opposite the first surface of the CIS die. The second surface of the CIS die is coupled with the first surface of the PCB. A transparent cover is coupled over the photosensitive region of the CIS die. An image signal processor (ISP) is embedded within the PCB. One or more electrical couplers electrically couple the CIS die with the PCB. A plurality of electrical contacts on the second surface of the PCB are electrically coupled with the CIS die and with the ISP. The ISP is located between the plurality of electrical contacts of the second surface of the PCB and the CIS die.

Composite component and mounting structure therefor

In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.

Method of manufacturing package unit, package unit, electronic module, and equipment
11587964 · 2023-02-21 · ·

A method of manufacturing a package unit, comprising: preparing a circuit board having a first region, a second region surrounding the first region, and a third region between the first and the second region; preparing a mold having a frame-shaped protruding portion surrounding a first cavity, the frame-shaped protruding portion partitioning the first cavity and a second cavity surrounding the first cavity; arranging the circuit board and the mold such that the first region of the circuit board faces the first cavity, the second region of the circuit board faces the second cavity, and a gap which communicates the first cavity and the second cavity with each other is formed between the frame-shaped protruding portion and the third region of the circuit board; and forming a frame-shaped resin member on top of the second region of the circuit board by pouring a resin into the second cavity.