A camera assembly includes a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip; functional components; and an encapsulation layer, embedded with the photosensitive unit and the functional components. The photosensitive chip and the functional components are exposed from a bottom surface of the encapsulation layer. A top surface of the encapsulation layer is higher than the photosensitive chip and functional components and exposes the optical filter. The photosensitive chip has soldering pads facing away from the bottom surface of the encapsulation layer. The functional components have soldering pads exposed from the bottom surface of the encapsulation layer. The camera assembly further includes a redistribution layer structure, disposed on the bottom surface of the encapsulation layer and electrically connecting to the soldering pads.

A camera assembly includes a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip; functional components; and an encapsulation layer, embedded with the photosensitive unit and the functional components. The photosensitive chip and the functional components are exposed from a bottom surface of the encapsulation layer. A top surface of the encapsulation layer is higher than the photosensitive chip and functional components and exposes the optical filter. The photosensitive chip has soldering pads facing away from the bottom surface of the encapsulation layer. The functional components have soldering pads exposed from the bottom surface of the encapsulation layer. The camera assembly further includes a redistribution layer structure, disposed on the bottom surface of the encapsulation layer and electrically connecting to the soldering pads.

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

An embodiment method for forming a semiconductor package includes attaching a first die to a first carrier, depositing a first isolation material around the first die, and after depositing the first isolation material, bonding a second die to the first die. Bonding the second die to the first die includes forming a dielectric-to-dielectric bond. The method further includes removing the first carrier and forming fan-out redistribution layers (RDLs) on an opposing side of the first die as the second die. The fan-out RDLs are electrically connected to the first die and the second die.

A semiconductor device including a first integrated circuit component, a second integrated circuit component, a third integrated circuit component, and a dielectric encapsulation is provided. The second integrated circuit component is stacked on and electrically coupled to the first integrated circuit component, and the third integrated circuit component is stacked on and electrically coupled to the second integrated circuit component. The dielectric encapsulation is disposed on the second integrated circuit component and laterally encapsulating the third integrated circuit component, where outer sidewalls of the dielectric encapsulation are substantially aligned with sidewalls of the first and second integrated circuit components. A manufacturing method of the above-mentioned semiconductor device is also provided.

A semiconductor package includes a first semiconductor chip including a first body portion, a first bonding layer including a first bonding insulating layer, a first redistribution portion including first redistribution layers, a first wiring insulating layer disposed between the first redistribution layers, and a second bonding layer including a second bonding insulating layer, a second redistribution portion including second redistribution layers, a second wiring insulating layer disposed between the second redistribution layers, and a second semiconductor chip disposed on the second redistribution portion. A lower surface of the first bonding insulating layer is bonded to an upper surface of the second bonding insulating layer, an upper surface of the first bonding insulating layer contacts the first body portion, a lower surface of the second bonding insulating layer contacts the second wiring insulating layer, and the first redistribution portion width is greater than the first semiconductor chip width.

The present disclosure provides a method for packaging a camera assembly. The method includes: providing a photosensitive chip; mounting an optical filter on the photosensitive chip; temporarily bonding the photosensitive chip and functional components on a carrier substrate, where the photosensitive chip has soldering pads facing away from the carrier substrate and the functional components have soldering pads facing toward the carrier substrate; forming an encapsulation layer covering the carrier substrate, the photosensitive chip, and the functional components, and exposing the optical filter; after the encapsulation layer is formed, removing the carrier substrate; and after the carrier substrate is removed, forming a redistribution layer structure on a side of the encapsulation layer facing away from the optical filter to electrically connect the soldering pads of the photosensitive chip with the soldering pads of the functional components.

The present disclosure provides a method for packaging a camera assembly. The method includes: providing a photosensitive chip; mounting an optical filter on the photosensitive chip; temporarily bonding the photosensitive chip and functional components on a carrier substrate, where the photosensitive chip has soldering pads facing away from the carrier substrate and the functional components have soldering pads facing toward the carrier substrate; forming an encapsulation layer covering the carrier substrate, the photosensitive chip, and the functional components, and exposing the optical filter; after the encapsulation layer is formed, removing the carrier substrate; and after the carrier substrate is removed, forming a redistribution layer structure on a side of the encapsulation layer facing away from the optical filter to electrically connect the soldering pads of the photosensitive chip with the soldering pads of the functional components.

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

A semiconductor device including a first integrated circuit component, a second integrated circuit component, a third integrated circuit component and a dielectric encapsulation is provided. The second integrated circuit component is stacked on and electrically connected to the first integrated circuit component. The third integrated circuit component is stacked on and electrically connected to the second integrated circuit component. The dielectric encapsulation laterally encapsulates the second integrated circuit component or the third integrated circuit component. In addition, manufacturing methods of the above-mentioned semiconductor device are provided.