Encapsulation warpage reduction for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes an interface die, a stack of semiconductor dies attached to a surface of the interface die, where the stack of semiconductor dies has a first height from the surface. The semiconductor die assembly also includes an encapsulant over the surface and surrounding the stack of semiconductor dies, where the encapsulant includes a sidewall with a first portion extending from the surface to a second height less than the first height and a second portion extending from the second height to the first height. Further, the first portion has a first texture and the second portion has a second texture different from the first texture.

A package structure includes a die, an encapsulant, a dam structure, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The encapsulant encapsulates sidewalls of the die. The encapsulant has a first surface and a second surface opposite to the first surface. The first surface is coplanar with the rear surface of the die. The second surface is located at a level height different from the active surface of the die. The dam structure is disposed on the active surface of the die. A top surface of the dam structure is substantially coplanar with the second surface of the encapsulant. The redistribution structure is over the encapsulant, the dam structure, and the die. The redistribution structure is electrically connected to the die.

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

Embodiments of the present disclosure are directed toward a stacked package assembly for embedded dies and associated techniques and configurations. In one embodiment, stacked package assembly may comprise a first die package and a second die package stacked one upon the other with plural interconnections between them; and a voltage reference plane embedded in at least one of the first and second die packages in proximity and generally parallel to the other of the first and second die packages.

A semiconductor package includes an organic interposer, a semiconductor chip, a passivation layer, and an underbump metallurgy (UBM) layer. The organic interposer includes insulating layers and wiring layers disposed on the insulating layers. The semiconductor chip is disposed on one surface of the organic interposer. The passivation layer is disposed on another surface of the organic interposer opposing the one surface on which the semiconductor chip is disposed, and has openings extending to portions of the wiring layer. The UBM layer includes UBM pads disposed on the passivation layer and UBM vias disposed in the openings and connecting the UBM pads and the wiring layer to each other. At least one groove portion is disposed in an outer circumferential surface of the UBM pad.

A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die. The redistribution circuit structure is electrically connected with the first and second semiconductor dies, and the lateral dimension of the first portion is greater than a lateral dimension of the redistribution circuit structure.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

An electronic package is provided, which includes: an electronic element having an active surface with a plurality of electrode pads, an inactive surface opposite to the active surface, and a side surface adjacent to and connecting the active and inactive surfaces; a plurality of conductive elements formed on the electrode pads of the electronic element; and an encapsulant covering the active and side surfaces of the electronic element and portions of side surfaces of the conductive elements and exposing the inactive surface of the electronic element. Therefore, the invention enhances the structural strength of the active surface of the electronic element so as to prevent cracking of the electronic element and hence avoid delamination of the conductive elements from the electronic element.

In a general aspect, an apparatus can include a metal layer, a first semiconductor die, a second semiconductor die, a molding compound, a first electrical contact and a second electrical contact. The first semiconductor die can have a first side disposed on the metal layer. The second semiconductor die can have a first side disposed on the metal layer. The metal layer can electrically couple the first side of the first semiconductor die with the first side of the second semiconductor die. The molding compound can at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die. The first electrical contact can be to a second side of the first semiconductor die and disposed on a surface of the apparatus. The second electrical contact can be to a second side of the second semiconductor die and disposed on the surface of the apparatus.