Embodiments include package structures having integrated waveguides to enable high data rate communication between package components. For example, a package structure includes a package substrate having an integrated waveguide, and first and second integrated circuit chips mounted to the package substrate. The first integrated circuit chip is coupled to the integrated waveguide using a first transmission line to waveguide transition, and the second integrated circuit chip is coupled to the integrated waveguide using a second transmission line to waveguide transition. The first and second integrated circuit chips are configured to communicate by transmitting signals using the integrated waveguide within the package carrier.

Embodiments include package structures having integrated waveguides to enable high data rate communication between package components. For example, a package structure includes a package substrate having an integrated waveguide, and first and second integrated circuit chips mounted to the package substrate. The first integrated circuit chip is coupled to the integrated waveguide using a first transmission line to waveguide transition, and the second integrated circuit chip is coupled to the integrated waveguide using a second transmission line to waveguide transition. The first and second integrated circuit chips are configured to communicate by transmitting signals using the integrated waveguide within the package carrier.

Embodiments include package structures having integrated waveguides to enable high data rate communication between package components. For example, a package structure includes a package substrate having an integrated waveguide, and first and second integrated circuit chips mounted to the package substrate. The first integrated circuit chip is coupled to the integrated waveguide using a first transmission line to waveguide transition, and the second integrated circuit chip is coupled to the integrated waveguide using a second transmission line to waveguide transition. The first and second integrated circuit chips are configured to communicate by transmitting signals using the integrated waveguide within the package carrier.

There is provided a power device capable of easily designing a switching circuit that takes measures against high frequency noise while maintaining a switching speed without change.

The power device includes a normally-on type first transistor, a normally-off type second transistor, and an electric path that forms a cascode connection between the first transistor and the second transistor, and contains an inductance component.

Described herein are integrated circuit structures having a package substrate with microstrip architecture as the uppermost layers and a surface conductive layer that is electrically connected to a ground plane internal to the package substrate, as well as related devices and methods. In one aspect of the present disclosure, an integrated circuit package substrate may have an internal ground plane, a dielectric layer, a microstrip signal layer as the top transmission line layer, a solder resist layer, and a surface conductive layer that is electrically connected to the internal ground plane in the package substrate. In another aspect of the present disclosure, an integrated circuit package substrate may include altering thicknesses of the dielectric and/or solder resist layers to optimize electrical performance by having the microstrip signal layer closer in proximity to the internal ground layer as compared to the surface conductive layer.

In a circuit substrate, a plurality of first microstrip lines connect outputs of a plurality of circuit patterns containing a parallel capacitor to a plurality of first output pads respectively. A plurality of second wires connect the first output pads of the circuit substrate to inputs of a plurality of transistor cells of a semiconductor substrate respectively. The numbers of the fingers of the transistor cells are the same. The first microstrip lines connected to the circuit patterns disposed on both sides of the lining-up circuit patterns are longer than the other first microstrip lines.

A radio-frequency (RF) apparatus that reduces signal reflections at input and output terminals is disclosed. The RF apparatus includes an assembly base and a semiconductor chip mounted on the assembly base in upside down. The semiconductor chip includes first to third metal layers and a top metal layer that provides a top ground layer and a pad. The pad is connected to the input or output terminals on the assembly base and extracts a signal line and a stub line in the third metal layer, where lines are transferred to the first metal layer. The semiconductor chip further includes an inner ground layer formed in the second metal line. The inner ground layer and the signal line just pulled out from the pad and formed in the third metal layer form a micro-strip line.

In a circuit substrate, a plurality of first microstrip lines connect outputs of a plurality of circuit patterns containing a parallel capacitor to a plurality of first output pads respectively. A plurality of second wires connect the first output pads of the circuit substrate to inputs of a plurality of transistor cells of a semiconductor substrate respectively. The numbers of the fingers of the transistor cells are the same. The first microstrip lines connected to the circuit patterns disposed on both sides of the lining-up circuit patterns are longer than the other first microstrip lines.

A method forming a packaged semiconductor device includes providing a first semiconductor die (first die) having bond pads thereon mounted face-up on a package substrate or on a die pad of a lead frame (substrate), wherein the substrate includes terminals or contact pads (substrate pads). A first dielectric layer is formed including printing a first dielectric precursor layer including a first ink having a first liquid carrier solvent extending from the substrate pads to the bond pads. A first interconnect precursor layer is printed including a second ink having a second liquid carrier over the first dielectric layer extending from the substrate pads to the bond pads. Sintering or curing the first interconnect precursor layer removes at least the second liquid carrier to form an electrically conductive interconnect including an ink residue which connects respective substrate pads to respective bond pads.

Shielding of high-frequency circuits is achieved using a simple and inexpensive configuration not using any lid. A high-frequency circuit mounting substrate (20) is disposed, on an underside surface layer of which are disposed high-frequency circuits (21 and 22) and is formed a first grounding conductor that has same electric potential as grounding conductors of the high-frequency circuits and that surrounds the high-frequency circuits. A mother control substrate (3) is disposed, on which the high-frequency circuit mounting substrate (20) is mounted in such a way that the high-frequency circuits are sandwiched therebetween and on which a second grounding conductor is formed in a region facing the high-frequency circuits. Plural first lands are formed on the first grounding conductor of the high-frequency circuit mounting substrate (20) to surround the high-frequency circuits. Plural second lands are formed that are electrically connected to the second grounding conductor at positions on a surface layer of the mother control substrate (3) which face the first lands. Plural solder balls (30G2) are disposed for connecting the first lands and the second lands. The high-frequency circuits are housed in pseudo shielding cavities surrounded by the solder balls (30G2), the grounding conductors of the high-frequency circuits, and the first and second grounding conductors.