A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

A semiconductor chip package includes a substrate having a top surface and a bottom surface, and a semiconductor device mounted on the top surface of the substrate. A gap is provided between the semiconductor device and the top surface of the substrate. A multi-layer laminate epoxy sheet is disposed on the top surface of the substrate and around a perimeter of the semiconductor device.

A semiconductor package device and a method of manufacturing a semiconductor package device are provided. The semiconductor package device includes a substrate, a first electronic component, a first dielectric layer, and a first hole. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface. The first dielectric layer is disposed on the second surface and has a third surface away from the substrate. The first hole extends from the first dielectric layer and the substrate. The first hole is substantially aligned with the first electronic component.

A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.

A process for conformally coating passive surface mount components soldered to a printed circuit substrate of a lidless flip-chip ball grid array package includes affixing a stiffener ring to the substrate before forming a conformal coating on the passive surface mount components. The stiffener ring is affixed to the substrate so that the plurality of passive surface mount components and the integrated circuit die are contained within an opening formed by the stiffener ring. After affixing the stiffener ring to the substrate, the conformal coating is formed on the passive surface mount components. The conformal coating extends over each of the passive surface mount components, around a periphery of each of the passive surface mount components, and under each of the passive surface mount components. A product made according to the process is also disclosed.

This application provides an embedded substrate, a circuit board assembly, and an electronic device. The embedded substrate in this application includes an insulation layer, and an electronic element and a conductive connector that are embedded inside the insulation layer. The conductive connector is electrically connected to the electronic element. The conductive connector includes at least one fuse unit, the fuse unit includes a fusible structure and two electrical connection ends, the fusible structure is connected between the two electrical connection ends in a direction of an electrical path of the conductive connector, and the fusible structure is configured to be blown when a passing current exceeds a preset current threshold, to disconnect an electrical connection between the electronic element and an external connection end. In this application, maintenance and replacement costs are low during current burning prevention, and a volume is compact.

A package that includes a substrate, a first integrated device coupled to the substrate, a first block device coupled to the substrate, a second encapsulation layer encapsulating the first integrated device and the first block device. The first block device includes a first electrical component, a second electrical component, a first encapsulation layer at least partially encapsulating the first electrical component and the second electrical component, and a first metal layer coupled to the first encapsulation layer.

Apparatus and methods are provided for integrated circuit packages having a low z-height. In an example, a method can include mounting a first integrated circuit sub-package to a first package substrate wherein the sub-package substrate spans an opening of the first package substrate, mounting a second integrated circuit package to a second package substrate, and mounting the first package substrate with the second package substrate wherein the mounting includes locating a portion of the second integrated circuit package within the opening of the first package substrate.

A substrate structure comprises a substrate having a first surface, a first electrode disposed on the first surface, a bump connected to the first electrode, and a protective member that covers the first surface and covers a portion of the bump. The protective member has an opening. The bump includes a portion exposed through the opening. The bump includes a first portion that is connected to the first electrode, and a second portion that is located farther from the first electrode than the first portion and is connected to the first portion. The bump has a constriction at a boundary between the first portion and the second portion. When viewed in a direction perpendicular to the first surface, a maximum diameter of the second portion is smaller than a maximum diameter of the first portion.

A method of forming a package structure includes: forming an inductor comprising a through-via over a carrier; placing a semiconductor device over the carrier; molding the semiconductor device and the through-via in a molding material; and forming a first redistribution layer on the molding material, wherein the inductor and the semiconductor device are electrically connected by the first redistribution layer.