A semiconductor package includes a first package having a first side and a second side opposing the first side. The first package comprises a first electronic component and a second electronic component arranged in a side-by-side manner on the second side. A second package is mounted on the first side of the first package. The second package comprises a radiative antenna element. A connector is disposed on the second side.

A semiconductor package includes a front redistribution structure having a first surface and a second surface, opposite to the first surface, a dielectric layer, an antenna substrate including a plurality of antenna members in the dielectric layer, a semiconductor chip having a connection pad connected to the plurality of antenna members, a conductive core structure having a first through-hole accommodating the antenna substrate and a second through-hole accommodating the semiconductor chip, and a rear redistribution structure including a conductive cover layer exposing an upper portion of the antenna substrate and covering an upper portion of the semiconductor chip, and a conductive via connecting the conductive cover layer to the conductive core structure.

A radio frequency module includes: a module board including first and second principal surfaces; first and second power amplifiers on the first principal surface; external-connection terminals on the second principal surface; and first and second via conductors connecting the first and second principal surfaces. The first and second via conductors are spaced apart in the module board, one end of the first via conductor is connected to a first ground electrode of the first power amplifier, the other end of the first via conductor is connected to a first external-connection terminal, one end of the second via conductor is connected to a second ground electrode of the second power amplifier, the other end of the second via conductor is connected to a second external-connection terminal, and the first and second via conductors each penetrate through the module board in a direction normal to the first and second principal surfaces.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises shielding on multiple sides thereof.

A package structure includes at least one integrated circuit component, an insulating encapsulation, and a redistribution structure. The at least one integrated circuit component includes a semiconductor substrate, an interconnection structure disposed on the semiconductor substrate, and signal terminals and power terminals located on and electrically connecting to the interconnection structure. The interconnection structure is located between the semiconductor substrate and the signal terminals and between the semiconductor substrate and the power terminals, and where a size of the signal terminals is less than a size of the power terminals. The insulating encapsulation encapsulates the at least one integrated circuit component. The redistribution structure is located on the insulating encapsulation and electrically connected to the at least one integrated circuit component.

A semiconductor package including a semiconductor die, an encapsulant, an electrical connector, a conductive pad and an inter-dielectric layer is provided. The encapsulant encapsulates the semiconductor die. The electrical connector is disposed over the semiconductor die. The conductive pad contacts the electrical connector and is disposed between the semiconductor die and the electrical connector. The inter-dielectric layer is disposed over the semiconductor die, wherein the inter-dielectric layer comprises an opening, and a portion of the opening is occupied by the conductive pad and the electrical connector.

A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a substrate having a first face and an opposing second face, wherein the first face is mounted with a first semiconductor component and a plurality of connectors; and a first shielding member covering the first semiconductor component and a first group of the plurality of connectors, while exposing a second group of the plurality of connectors.

A semiconductor device includes a first functional block configured to provide a first predetermined function, a second functional block configured to provide a second predetermined function, a first capacitive device, a second capacitive device, a first coupling path, a first switch device and a second switch device. The first capacitive device is disposed physically proximate the first functional block. The second capacitive device is disposed physically proximate the second functional block. The first coupling path includes at least a first connection node connecting to the first functional block. The first switch device is controlled to selectively connect the first capacitive device to the first connection node. The second switch device is controlled to selectively connect the second capacitive device to the second functional block or a second connection node. The second connection node is disposed on the first coupling path and connecting to the first connection node.

Embodiments of the present disclosure relate to methods of fabricating IC devices with IC structures with improved bonding between a semiconductor layer and a non-semiconductor support structure, as well as resulting IC devices, assemblies, and systems. An example method includes providing a semiconductor material over a semiconductor support structure and, subsequently, depositing a first bonding material on the semiconductor material. The method further includes depositing a second bonding material on a non-semiconductor support structure such as glass or mica wafers, followed by bonding the face of the semiconductor material with the first bonding material to the face of the non-semiconductor support structure with the second bonding material. Using first and second bonding materials that include silicon, nitrogen, and oxygen (e.g., silicon oxynitride or carbon-doped silicon oxynitride) may significantly improve bonding between semiconductor layers and non-semiconductor support structures compared to layer transfer techniques.

A semiconductor device package and a method for manufacturing the semiconductor device package are provided. The electronic device includes a first carrier having a first surface, an interposer disposed over the first surface of the first carrier, wherein the interposer has a first thickness and a second thickness in a direction substantially perpendicular to the first surface of the first carrier; and a plurality of electrical connections between the first carrier and the interposer and configured to compensate a difference between the first thickness and the second thickness of the interposer.