Patent classifications
H01L2924/19106
SEMICONDUCTOR PACKAGE WITH LAYER STRUCTURES, ANTENNA LAYER AND ELECTRONIC COMPONENT
A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.
ELECTRONIC PACKAGE AND METHOD FOR FABRICATING THE SAME
An electronic package is provided, which includes: a circuit structure having opposite first and second surfaces; a metal layer formed on the first surface of the circuit structure; an electronic element disposed on the metal layer; an encapsulant encapsulating the electronic element; a plurality of conductive posts disposed on the second surface of the circuit structure; and an insulating layer encapsulating the conductive posts. The conductive posts of various sizes can be fabricated according to different aspect ratio requirements so as to make end products lighter, thinner, shorter and smaller. The disclosure further provides a method for fabricating the electronic package.
SEMICONDUCTOR PACKAGE
A semiconductor package includes a first sub-semiconductor package, an interposer substrate, and a second sub-semiconductor package that are sequentially stacked. The first sub-semiconductor package includes a first package substrate, a first semiconductor device, and a first mold member that are sequentially stacked, and the interposer substrate includes at least one hole. The first mold member includes: a mold main portion which covers the first semiconductor device; a mold connecting portion extended from the mold main portion and inserted into the at least one hole; and a mold protruding portion extended from the mold connecting portion to cover a top surface of the interposer substrate outside the at least one hole. The mold main portion, the mold connecting portion, and the mold protruding portion constitute a single object.
Cooling Device and Process for Cooling Double-Sided SiP Devices During Sputtering
A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.
Redistribution structures for semiconductor packages and methods of forming the same
A method for forming a redistribution structure in a semiconductor package and a semiconductor package including the redistribution structure are disclosed. In an embodiment, the method may include encapsulating an integrated circuit die and a through via in a molding compound, the integrated circuit die having a die connector; depositing a first dielectric layer over the molding compound; patterning a first opening through the first dielectric layer exposing the die connector of the integrated circuit die; planarizing the first dielectric layer; depositing a first seed layer over the first dielectric layer and in the first opening; and plating a first conductive via extending through the first dielectric layer on the first seed layer.
Package comprising passive device configured as electromagnetic interference shield
Packages are configured to include an electromagnetic interference (EMI) shield. According to one example, a package includes a substrate, an electrical component, and an EMI shield. The substrate includes a first surface and a second surface. The electrical component may be coupled to the first side of the substrate. The EMI shield is formed with at least one passive device. The at least one passive device is coupled to the first surface of the substrate. The at least one passive device is located laterally to the at least one electrical component, and extends along at least a portion of the electrical component. Other aspects, embodiments, and features are also included.
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises a substrate having a first surface and a second surface opposite to the first surface, and comprising at least one first recess portion formed in a direction ranging from the first surface toward the second surface, a plurality of first recess conductive patterns formed in the first recess portion, and a first passive element inserted into the first recess portion of the substrate and having a first electrode and a second electrode electrically connected to the plurality of first recess conductive patterns.
Semiconductor Device and Method of Forming Embedded Die Substrate, and System-in-Package Modules with the Same
A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.
FAN-OUT SEMICONDUCTOR PACKAGE
The fan-out semiconductor package includes: a semiconductor chip having an active surface having a connection pad disposed thereon and an inactive surface disposed to oppose the active surface; a first capacitor disposed adjacently to the semiconductor chip; an encapsulant at least partially encapsulating the first connection member and the semiconductor chip; a first connection member disposed on the encapsulant, the first capacitor, and the semiconductor chip, and a second capacitor disposed on the other surface of the first connection member opposing one surface of the first connection member on which the semiconductor chip is disposed, wherein the first connection member includes a redistribution layer electrically connected to the connection pad of the semiconductor chip, the first capacitor, and the second capacitor, and the first capacitor and the second capacitor are electrically connected to the connection pad through a common power wiring of the redistribution layer.
Module substrate and method for manufacturing module substrate
A module substrate includes a plurality of electronic components mounted on at least one surface of a base substrate and a columnar terminal connection substrate connected to the one surface of the base substrate on which a plurality of the electronic components are mounted. The terminal connection substrate includes a plurality of conductor portions, at least one corner of the columnar terminal connection substrate is chamfered with a flat surface and/or curved surface, and the terminal connection substrate is connected at a side surface thereof contacting the chamfered surface, to the one surface of the base substrate.