Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.

A high-frequency module includes a mounting substrate having main surfaces 30a and 30b, a first circuit component mounted on the main surface 30a, a second circuit component mounted on the main surface 30b, an external connection terminal arranged on the main surface 30b side relative to the main surface 30a with respect to the mounting substrate, a long via conductor connected to the first circuit component, passing through the mounting substrate, and having a substantially long shape when the mounting substrate is viewed in a plan view, and a metal block arranged on the main surface 30b side relative to the main surface 30a with respect to the mounting substrate and connecting the long via conductor and the external connection terminal. When the mounting substrate is viewed in a plan view, the first circuit component overlaps the long via conductor and the metal block overlaps the long via conductor.

A semiconductor device includes: a package having a top surface and a bottom surface; a semiconductor element arranged in the package; and a base which is arranged in the package and on which the semiconductor element is mounted. A top surface of the base is exposed to the top surface of the package, and a bottom surface of the base is exposed to the bottom surface of the package.

A circuit board and package assembly electrically connecting a die to a circuit board. The circuit board has signal paths terminating in a signal pad located on an insulating layer. The circuit board also includes a ground pad on the insulating layer that has a concave shaped side forming a recess, the with a signal pad at least partially within the recess. A package has package ground pads aligned with the circuit board ground pads and package signal pads aligned with circuit board signal pads. The package ground pads extend through the package to connect to package ground paths, which extend toward the die. The package signal pads extend through the package to connect to package signal paths and the package signal paths extend toward the die, maintaining a consistent distance from the package ground paths. Multiple-tier bond wires connect the package bond locations to the die bond pads.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.

A packaged RF device is provided that utilizes flexible circuit leads. The RF device includes at least one integrated circuit (IC) die configured to implement the RF device. The IC die is contained inside a package. In accordance with the embodiments described herein, a flexible circuit is implemented as a lead. Specifically, the flexible circuit lead is coupled to the at least one IC die inside the package and extends to outside the package, the flexible circuit lead thus providing an electrical connection to the at least one IC die inside the package.

According to the present invention, an integrated circuit includes a first amplifier stage, a second amplifier stage, a first signal line connecting an output of the first amplifier stage and an input of the second amplifier stage to each other, a first plane for ground connected to the first amplifier stage, a second plane for ground connected to the second amplifier stage and at least one at least one line for ground connecting the first plane and the second plane to each other, wherein the at least one line has a center line having a length of 10 μm to 1 mm, a width of the at least one line is ⅓ or less of a width of the first plane, and a pattern ratio is 1 or more.

There are disclosed impedance matching networks and technique for impedance matching to microwave power transistors. Distributed capacitor inductor networks are used so as to provide a high degree of control and accuracy, especially in terms of inductance values, in comparison to existing lumped capacitor arrangements. The use of bond wires is reduced, with inductance being provided primarily by microstrip transmission lines on the capacitors.

There are disclosed impedance matching networks and technique for impedance matching to microwave power transistors. Distributed capacitor inductor networks are used so as to provide a high degree of control and accuracy, especially in terms of inductance values, in comparison to existing lumped capacitor arrangements. The use of bond wires is reduced, with inductance being provided primarily by microstrip transmission lines on the capacitors.

The embodiments described herein provide an amplifier device that utilizes bonding pad capacitance in an impedance matching network. In one specific embodiment, the amplifier device comprises: an amplifier formed on a semiconductor die, the amplifier including an amplifier input and an amplifier output, the amplifier configured to generate an amplified radio frequency (RF) signal at the amplifier output; and an impedance matching network coupled to the amplifier, the impedance matching network including a capacitor, where the capacitor includes a first plate, a second plate, and dielectric material between the first and second plates, where the first plate includes or is directly electrically coupled to a bond pad on the semiconductor die.