Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip includes a reconstituted chip-level back end of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.

A printed circuit board includes: a substrate body part including a first region and a second region, and including a first side and a second side; first upper redistribution patterns disposed on the first side in the first region; third upper redistribution patterns disposed on the first side in the second region; second upper redistribution patterns disposed on the first side and between the first and third upper redistribution patterns; connection patterns connecting the first upper redistribution patterns to the second upper redistribution patterns; a solder resist film including first recesses, second recesses, and third recesses, which respectively expose upper surfaces of the first, second and third upper redistribution patterns; and dummy wire patterns disposed within the second and third recesses and connecting the second upper redistribution patterns to the third upper redistribution patterns, wherein the first, second and third upper redistribution patterns are electrically connected to one another.

Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip includes a reconstituted chip-level back end of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.

A 3D stack package structure includes a first chip, a second chip, a through-silicon via (TSV), and a multi-layer protective structure. The second chip is bonded to the first chip. The second chip includes an interconnect structure composed of multiple metal layers and a plurality of vias respectively connecting upper and lower layers of the multiple metal layers. The TSV extends through the second chip. The multi-layer protective structure is disposed within the second chip and surrounds the TSV. The multi-layer protective structure includes: multiple protective layers, each having an opening for passage of the TSV; and a plurality of sealing rings, respectively connecting upper and lower layers of the multiple protective layers and surrounding the TSV.

A semiconductor package includes a package board, at least one semiconductor chip disposed on the package board, a molding member disposed on the package board and at least partially surrounding the at least one semiconductor chip, and a heat dissipation member disposed on the at least one semiconductor chip and the molding member. The molding member has first region in which a plurality of uneven structures are disposed, and a second region spaced apart from an external region by the plurality of uneven structures. The plurality of uneven structures protrude to a predetermined height away from the semiconductor chip, the molding member, and the heat dissipation member, and may be formed as a part of the head dissipation member, or formed separately.

An integrated circuit package having more than one semiconductor die includes a spark gap to provide a current path designed to protect the device. The spark gap can be provided between an exposed portion of a corner lead and an exposed portion of a tie bar and/or between exposed portions of adjacent leads. The spark gap distance is designed to achieve required ratings for a given application. Stacked and side-by-side die configurations are described.

A first chip includes a substrate, and first and second electrodes in a second region surrounding a first region. A second chip includes an interconnect layer, third and fourth electrodes in the second region, and first and second walls. Each of the first and third electrodes and the first wall includes a conductor surrounding the first region. The first and second electrodes are respectively in contact with the third and fourth electrodes. The first and second walls are in contact with the interconnect layer and are electrically coupled to the substrate via the first and third electrodes and the second and fourth electrodes, respectively. Each of a first ratio of an area covered by the first and second electrodes to the second region and a second ratio of an area of the third and fourth electrodes to the second region is 3% or more and 40% or less.

In an aspect, an IC device may include a base substrate including an embedded component and a first metallization structure. The first metallization structure includes a plurality of first metal layers, a plurality of first dielectric layers, a plurality of first vias configured to couple adjacent metal layers of the plurality of first metal layers through the plurality of first dielectric layers and a reserve capacitor disposed within one of the plurality of first dielectric layers. The reserve capacitor directly coupled between a first contact pad and a second contact pad formed in one of the plurality of first metal layers, and electrically coupled to the embedded component.

A first chip includes a substrate, and first and second electrodes in a second region surrounding a first region. A second chip includes an interconnect layer, third and fourth electrodes in the second region, and first and second walls. Each of the first and third electrodes and the first wall includes a conductor surrounding the first region. The first and second electrodes are respectively in contact with the third and fourth electrodes. The first and second walls are in contact with the interconnect layer and are electrically coupled to the substrate via the first and third electrodes and the second and fourth electrodes, respectively. Each of a first ratio of an area covered by the first and second electrodes to the second region and a second ratio of an area of the third and fourth electrodes to the second region is 3% or more and 40% or less.

A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device further includes a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity. The semiconductor device further includes a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.