A semiconductor device including: an insulating substrate having a conductor layer on the upper face and the lower face and a semiconductor element mounted on the upper conductor layer; a base plate bonded to the lower conductor layer; a case member surrounding the insulating substrate and bonded to the surface of the base plate to which the conductor layer bonded to the lower face; a first filler being a silicone composition filled in a region surrounded by the base plate and the case member; and a second filler being injected into a region below the first filler and surrounding a peripheral edge portion of the insulating substrate, whose height from the base plate is higher than the upper face and is lower than a bonding face between the semiconductor element and the upper conductor layer.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of flat particulate inorganic ceramic and/or metallic electrically insulating, and/or electrically conducting, and/or thermally conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures, such particles resulting in the reduction of the occurrence and size of gas voids within the adhesive bondline.

A dispenser includes a syringe container having a first end and a second end, the syringe container having a length direction extending between the first end and the second end, a plunger movable within the syringe container along the length direction of the syringe container and configured to be positioned on a surface of an underfill solution to be received within the syringe container at a first region between the plunger and the second end, a cap attached airtightly to the first end of the syringe container, a first gas supply line configured to supply a first gas into the syringe container through the cap, and a second gas supply line extending from the cap to the plunger, the second gas supply line being in fluid communication with the first region and configured to supply a second gas into the underfill solution to be received within the syringe container at the first region through a through hole of the plunger.

A semiconductor device including: an insulating substrate having a conductor layer on the upper face and the lower face and a semiconductor element mounted on the upper conductor layer; a base plate bonded to the lower conductor layer; a case member surrounding the insulating substrate and bonded to the surface of the base plate to which the conductor layer bonded to the lower face; a first filler being a silicone composition filled in a region surrounded by the base plate and the case member; and a second filler being injected into a region below the first filler and surrounding a peripheral edge portion of the insulating substrate, whose height from the base plate is higher than the upper face and is lower than a bonding face between the semiconductor element and the upper conductor layer.

A method of manufacturing a high quality a semiconductor device, includes loading a substrate comprising a conductive film and an insulating film into a process chamber. The insulating film is formed around the conductive film to expose the conductive film. A process gas, which comprises a component that reacts with a desorbed gas generated from the insulating film is supplied into the process chamber which causes a protective film to be selectively formed on the insulating film.

A method of manufacturing a high quality a semiconductor device, includes loading a substrate comprising a conductive film and an insulating film into a process chamber. The insulating film is formed around the conductive film to expose the conductive film. A process gas, which comprises a component that reacts with a desorbed gas generated from the insulating film is supplied into the process chamber which causes a protective film to be selectively formed on the insulating film.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of flat particulate inorganic ceramic and/or metallic electrically insulating, and/or electrically conducting, and/or thermally conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures, such particles resulting in the reduction of the occurrence and size of gas voids within the adhesive bondline.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

Systems and methods are provided for producing an integrated circuit package, e.g., an SOIC package, having reduced or eliminated lead delamination caused by epoxy outgassing resulting from the die attach process in which an integrated circuit die is attached to a lead frame by an epoxy. The epoxy outgassing may be reduced by heating the epoxy during or otherwise in association with the die attach process, e.g. using a heating device provided at the die attach unit. Heating the epoxy may achieve additional cross-linking in the epoxy reaction, which may thereby reduce outgassing from the epoxy, which may in turn reduce or eliminate subsequent lead delamination. A heating device located at or near the die attach site may be used to heat the epoxy to a temperature of 55 C.5 C. during or otherwise in association with the die attach process.