A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.

The present invention provides a small-sized filter which has good characteristics. A filter according to the present invention comprises: a resonator which has a via electrode part that is formed within a dielectric substrate and a first strip line that is connected to one end of the via electrode part, while facing a first shielding conductor among a plurality of shielding conductors that are formed so as to surround the via electrode part; an input/output terminal which is coupled to a second shielding conductor among the plurality of shielding conductors; and a first capacitor electrode pattern which is coupled to the input/output terminal. The first capacitor electrode pattern is capacitively coupled to the first strip line or a second capacitor electrode pattern that is connected to the via electrode part.

A filter cable, which solves the problem that devices which can better cope with various problems in complex electromagnetic environment and have simple and reasonable structural design are lacking in the related art. The filter cable comprises a core wire; the core wire comprises an insulating substrate and a first conductor layer surrounding the insulating substrate; the first conductor layer has a first etching pattern; the first etching pattern is distributed along the axial direction of the filter cable; and the first etching pattern is used to make the filter cable equivalent to a first filter circuit to realize the filtering function.

A tunable band-stop filter, a method of driving a tunable band-stop filter and an electronic device are provided. The tunable band-stop filter includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate. The first substrate includes a wire structure on a first base substrate, the second substrate includes a common electrode on a second base substrate. The wire structure includes a first wire structure and a second wire structure. The first wire structure, the common electrode, and the liquid crystal layer between the first wire structure and the common electrode constitute a first phase modulation structure, and the second wire structure, the common electrode, and the liquid crystal layer between the second wire structure and the common electrode constitute a second phase modulation structure.

An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.

The present disclosure provides a bandpass filter based on effective localized surface plasmons (ELSPs) and an operation method thereof. The bandpass filter includes a metal ground plane on a lower portion and a dielectric substrate in a middle as well as microstrips and dielectric resonators on an upper portion, where the microstrips at two terminals are symmetric with each other; each dielectric resonator includes a cuboid dielectric body and two metal strips, where the two metal strips each the same as the cuboid dielectric body in length are respectively located in a middle of an upper surface and lower surface of the dielectric body; and two microstrips are respectively connected to the metal strips on lower surfaces of two dielectric resonators, so as to be used as ports for feeding.

A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

An on-chip microwave filter circuit includes a substrate formed of a first material that exhibits at least a threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The filter circuit further includes a dispersive component configured to filter a plurality of frequencies in an input signal, the dispersive component including a first transmission line disposed on the substrate, the first transmission line being formed of a second material that exhibits at least a second threshold level of thermal conductivity, where the second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The dispersive component further includes a second transmission line disposed on the substrate, the second transmission line being formed of the second material.

A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.