The present invention relates to a cavity filter and a connecting structure included therein. The cavity filter includes: an RF signal connecting portion spaced apart, by a predetermined distance, from an outer member having an electrode pad provided on a surface thereof; and a terminal portion configured to electrically connect the electrode pad of the outer member and the RF signal connecting portion so as to absorb assembly tolerance existing at the predetermined distance and to prevent disconnection of the electric flow between the electrode pad and the RF signal connecting portion, wherein the terminal portion includes: a first side terminal contacted with the electrode pad; and a second side terminal having a housing space in which a part of the first side terminal is housed, and connected to the RF signal connecting portion, wherein the first side terminal is provided as an elastic deformable body whose part is radially widened or narrowed against an assembly force provided by an assembler. Therefore, the cavity filter can efficiently absorb assembly tolerance which occurs through assembly design, and prevent disconnection of an electric flow, thereby preventing degradation in performance of an antenna device.

The present invention provides wideband millimeter-wave SIW-fed FPC filtering antenna comprising a partially reflecting surface (PRS) and a filtering source configured to radiate a millimeter-wavelength electromagnetic wave. The filtering source comprises a conductive reflecting plane configured to work with the PRS to form a Fabry-Perot cavity; radiating elements including a pair of shorted radiating patches electrically connected to a ground plane through a pair of probes; and a substrate integrated waveguide (SIW) feeding structure coupled to the pair of radiating patches through a coupling aperture. The SIW-fed FPC filtering antenna has the advantages of wider bandwidth, higher directivity/gain, reduced structural complexity, compact size and appropriate feeding type for millimeter-wave applications.

A method of fabricating and tuning a surface integrated waveguide (SIW) filter incudes covering upper and lower surfaces of a dielectric substrate with a metallic layer. The method includes drilling a plurality of vias on the dielectric substrate and covering the vias with the metallic layer, wherein a first group of vias forms one or more cavity resonators, a second group of vias defines coupling channels between the cavity resonators, a third group of vias defines an effective width and a fourth group of vias defines an effective length of the cavity resonators. The method includes varying a center frequency by increasing diameters of the second group of vias to decrease the width of the coupling channels and varying a roll-off by increasing diameters of the third and fourth groups of vias to decrease the effective width and the effective length of the resonators.

A ceramic waveguide filter, a radio unit, an antenna unit and a base station are disclosed. According to an embodiment, a ceramic waveguide filter comprises a body (1) that is made of a ceramic material and that has a plurality of resonators each including a blind hole (101). The blind holes (101) of two of the resonators open at a first surface of the body (1) and extend toward an opposite econd surface of the body (1). Capacitive coupling between the two resonators is achieved by a coupling structure (201) on/in a substrate (2), to which the body (1) is attached at the side of the second surface.

A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

A radiation pattern reconfigurable antenna includes an input port, a signal divider, a filter, and first and second radiators. The signal divider is connected to the input port and configured to divide a signal at the input port into a first output and a second output. The filter is connected to the second output, wherein the filter is configured to filter signal within a first frequency band and to pass signals within a second frequency band. The first radiator is configured to receive the signal from the first output of the signal divider, wherein the first radiator receives signals within the first frequency band and the second frequency band. The second radiator is connected to the filter to receive signals provided within the second frequency band.

A radiation pattern reconfigurable antenna includes an input port, a signal divider, a filter, and first and second radiators. The signal divider is connected to the input port and configured to divide a signal at the input port into a first output and a second output. The filter is connected to the second output, wherein the filter is configured to filter signal within a first frequency band and to pass signals within a second frequency band. The first radiator is configured to receive the signal from the first output of the signal divider, wherein the first radiator receives signals within the first frequency band and the second frequency band. The second radiator is connected to the filter to receive signals provided within the second frequency band.

An antenna apparatus includes an antenna integrated with a filter. The antenna apparatus includes a plurality of resonators where at least some of the resonators are each enclosed in a metal cavity and at least one resonator is exposed to free space to form a radiator element. The antenna apparatus has a filter transfer function that is at least partially determined by dimensions of the radiator element and the position of the radiator element within the antenna apparatus.

Various substrate-integrated waveguide (SIW) filtering crossover systems are described. An example SIW filtering crossover system may include: a substrate; a top metal plate placed on top of the substrate; a bottom metal plate placed beneath the substrate; a plurality of metalized via-holes in the substrate connecting the top metal plate and the bottom metal plate; and a plurality of grounded-coplanar-waveguides (GCPWs) coupled to sidewalls of the crossover system, wherein each of the GCPWs connects the crossover system to a respective microstrip line for signal transmission between the respective microstrip line and the crossover system.