A resonance cavity comprising a first layer of dielectric material having a first dielectric constant and a first thickness, a second layer of dielectric material having a second dielectric constant different from the first dielectric constant and a second thickness, a metal patch arranged between the first and the second layer of dielectric material, and an electromagnetically shielded enclosure having at least one aperture, the electromagnetically shielded enclosure arranged to enclose part of the first and second layers of dielectric material and the metal patch.

A radar device for limiting radio-frequency power leakage is provided. The radar device includes a first component, and a second component. The first component has a first surface and a first waveguide that defines a first cavity. The second component has a second surface and a second waveguide that defines a second cavity. A first groove is provided that acts as a choke, and the first groove is defined in the first surface. The first component and the second component are assembled so that an air gap is maintained between the first waveguide and the second waveguide. The first waveguide and the second waveguide are configured to facilitate transmission of radio-frequency power. The first groove is configured to reduce leakage of radio-frequency power through the air gap. Additional chokes may also be included.

Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

A cavity device is disclosed comprising a plurality of flat boards stacked one on lop of the other to form a multilayered structure. At least some of the flat boards comprise at least one opening or perforations having one or more layers of electrically conducting materials configured to establish electrical conduction with one or more layers of electrically conducting materials of another one of the flat boards, to thereby form electrically conducting patterns in the multilayered structure for interacting with electromagnetic radiation introduced into the cavity device.

In order to prevent electrical characteristics from degrading, a band-pass filter includes: a dielectric substrate having an upper surface and a lower surface opposed to each other, the dielectric substrate extending in a waveguide axial direction; a pair of conductor layers respectively arranged on the upper surface and the lower surface of the dielectric substrate; two rows of through hole groups for sidewalls, which are formed at predetermined intervals in the waveguide axial direction so as to electrically connect the pair of conductor layers; and a plurality of through holes for electrically connecting the pair of conductor layers, the plurality of through holes being formed in parallel to the waveguide axial direction and arranged in a center of a waveguide formed in a region surrounded by the pair of conductor layers and the two rows of the through hole groups for sidewalls.

An apparatus includes a top conductive layer of on an integrated circuit waveguide filter and a bottom conductive layer. The top and bottom conductive layers are coupled via a plurality of couplers that form an outline of the waveguide filter. A dielectric substrate layer is disposed between the top conductive layer and the bottom conductive layer of the integrated circuit waveguide filter. The dielectric substrate layer has a relative permittivity, εr that affects the tuning of the integrated circuit waveguide filter. At least one tunable via includes a tunable material disposed within the dielectric substrate layer and is coupled to a set of electrodes. The set of electrodes enable a voltage to be applied to the tunable material within the tunable via to change the relative permittivity of the dielectric substrate layer and to enable tuning the frequency characteristics of the integrated circuit waveguide filter.

Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

A waveguide structure includes a dielectric layer, a plurality of circuit layers, a plurality of insulation layers, and a conductor connection layer. The dielectric layer has an opening. The circuit layers are disposed on the dielectric layer. The insulation layers and the circuit layers are alternately stacked. The conductor connection layer covers an outer wall of the opening in a direction perpendicular to the circuit layers and connects at least two circuit layers on two opposite sides of the opening. At least the conductor connection layer and a part of the circuit layers define an air cavity for transmitting signals at a position corresponding to the opening.

A filter device having desired characteristics is easily designed. The filter device includes a post-wall waveguide functioning as a resonator group including five congruent resonators (R.sub.1 to R.sub.5). The resonators (R.sub.1, R.sub.2) include therein respective control posts (CP.sub.1, CP.sub.2), and a shortest distance (d.sub.i) from the control post (CP.sub.i) to a narrow wall of the resonator (R.sub.i) satisfies d.sub.1>d.sub.2. The resonators (R.sub.4, R.sub.5) include therein respective control posts (CP.sub.4, CP.sub.5), and a shortest distance (d.sub.j) from the control post (CP.sub.j) to a narrow wall of the resonator (R.sub.j) satisfies d.sub.4<d.sub.5.