H01P3/082

Substrate integrated waveguide transition including a metallic layer portion having an open portion that is aligned offset from a centerline
11539107 · 2022-12-27 · ·

Example embodiments relate to substrate integrated waveguide (SIW) transitions. An example SIW may include a dielectric substrate having a top surface and a bottom surface and a first metallic layer portion coupled to the top surface of the dielectric substrate that includes a single-ended termination, an impedance transformer, and a metallic rectangular patch located within an open portion in the first metallic layer portion such that the open portion forms a non-conductive loop around the metallic rectangular patch. The SIW also includes a second metallic layer portion coupled to the bottom surface of the dielectric substrate and metallic via-holes electrically coupling the first metallic layer to the second metallic layer. The SIW may be implemented in a radar unit to couple antennas to a printed circuit board (PCB). In some examples, the SIW may be implemented with only a non-conductive opening that lacks the metallic rectangular patch.

Interlayer region having a signal via for coupling between planar signal lines, where a multi-mode signal propagates through the interlayer region

A signal via has a via diameter that causes a high-frequency signal to be propagated through a high-frequency transmission line causing multi mode propagation (multi-mode interference propagation). At least one of the inter-via distance between the signal via and respective ground vias, the via diameter, and the thickness of the multilayer substrate is determined to introduce the high-frequency signal from the interlayer transmission line to the signal lines in the high-intensity region of the multi mode propagation.

Flexible cable including a transmission line having an air gap configured to prevent signals from propagating to the air gap

A flexible cable is provided. The flexible cable includes a first insulation part, a second insulation part disposed on the first insulation part, a first group of ground parts disposed at regular intervals under the first insulation part, at least one transmission line disposed at regular intervals under the first insulation part and alternately arranged with the first group of ground parts, an air gap formed under the first insulation part, a prepreg layer disposed under the first insulation part, and a third insulation part disposed under the air gap and the prepreg layer. The air gap is configured to prevent signals emitted from the at least one transmission line from propagating in a direction of the air gap. Hence, it is possible to shield electromagnetic interference with other electronic components while minimizing the signal loss.

LOW LOSS AND LOW CROSS TALK TRANSMISSION LINES USING SHAPED VIAS

Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

Composite substrate for a waveguide and method of manufacturing a composite substrate

Composite substrate for a waveguide for RF signals having a signal frequency, wherein said composite substrate comprises at least a first layer of dielectric material and a second layer of dielectric material, and at least one conductor layer of an electrically conductive material arranged between said first layer and said second layer, wherein a layer thickness of said at least one conductor layer is smaller than about 120 percent of a skin depth of said RF signals within said electrically conductive material of said conductor layer.

Board-to-board interconnect apparatus including microstrip circuits connected by a waveguide, wherein a bandwidth of a frequency band is adjustable

Disclosed is a chip-to-chip interface using a microstrip circuit and a dielectric waveguide. A board-to-board interconnection device, according to one embodiment of the present invention, comprises: a waveguide which has a metal cladding and transmits a signal from a transmitter-side board to a receiver-side board; and a microstrip circuit which is connected to the waveguide and has a microstrip-to-waveguide transition (MWT), wherein the microstrip circuit matches a microstrip line and the waveguide, adjusts the bandwidth of a predetermined first frequency band among the frequency bands of the signal, and provides same to the receiver.

RAPID OVER-THE-AIR PRODUCTION LINE TEST PLATFORM

Provided is a rapid over-the-air (OTA) production line test platform, including a device under test (DUT), an antenna array and two reflecting plates. The DUT has a beamforming function. The antenna array is arranged opposite to the DUT, and emits beams with beamforming. Two reflecting plates are disposed opposite to each other, and are arranged between the DUT and the antenna array. The beam OTA test of the DUT is carried out by propagation of the beams between the antenna array, the DUT and the two reflecting plates. Accordingly, the test time can be greatly shortened and the cost of test can be effectively reduced. In addition to the above-mentioned rapid OTA production line test platform, platforms for performing the OTA production line test by using horn antenna arrays together with bending waveguides and using a 3D elliptic curve are also provided.

Transmission line
11158922 · 2021-10-26 · ·

The present invention reduces the risk of damaging a waveguide made of a brittle material. A transmission line (1) includes: a first waveguide (11) which is made of a brittle material; a second waveguide (21); and a bonding layer (31) by which the first waveguide (11) and the second waveguide (21) are bonded and which is electrically conductive. At least part of the bonding layer (31) is made of an electrically conductive adhesive, the at least part of the bonding layer (31) being in contact with the first waveguide (11).

CARRIER-CONTAINING METAL FOIL AND METHOD FOR MANUFACTURING MILLIMETER-WAVE ANTENNA SUBSTRATE USING SAME

Provided is a carrier-attached metal foil which has excellent carrier-releasability and excellent selective metal layer-etchability, and can achieve a reduction in transmission loss and resistance in a semiconductor package (for example, a millimeter-wave antenna substrate) manufactured using the same. The carrier-attached metal foil includes: (a) a carrier; (b) a release functional layer on the carrier and including (b1) an adhesion layer disposed closer to the carrier and having a thickness of more than 10 nm and less than 200 nm and (b2) a release assistance layer disposed farther from the carrier and having a thickness of 50 nm or more and 500 nm or less; and (c) a composite metal layer on the release functional layer and including (c1) a carbon layer disposed closer to the release assistance layer, and (c2) a first metal layer disposed farther from the release assistance layer and mainly composed of Au or Pt.

TRANSMISSION LINE HAVING IMPROVED BENDING DURABILITY

The present invention relates to a transmission line having improved bending durability, which includes a strip structure or a micro-strip structure that is divided into a base part and a bending part that is bent and unfolded based on the base part, wherein the base part and the bending part include a signal line configured to extend in a length direction so as to transmit a high frequency signal, a first dielectric of which an upper surface or a lower surface is provided with the signal line formed thereon, and a second dielectric formed above the first dielectric; and the second dielectric is coupled to the first dielectric in the base part and separated from the first dielectric in the bending part.