An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.

A passively, Q-switched laser operating at an eye safe wavelength of between 1.2 and 1.4 microns is described. The laser may operate at a lasing wavelength of 1.34 microns and use a gain element of Nd:YVO.sub.4 and a saturable absorber element of V:YAG. The systems and methods to produce short pulses having a pulse duration less than 1 ns and high energy pulses having pulse energies greater than 2 μJ are described.

A kind of all-solid-state high-power slab laser based on phonon band-edge emission, which is comprised of a pumping source, a focusing system, a resonant cavity and a self-frequency-doubling crystal; the said self-frequency-doubling crystal is a Yb-doped RECOB crystal cut into slab shape along the direction of the crystal's maximum effective nonlinear coefficient of its non-principal plane; by changing the cutting direction of the crystal, the phase matching of different wavelengths is realized, thus realizing laser output at the band of 560-600 nm; the said pumping source is a diode laser matrix with a wavelength of 880 nm-980 nm; the input cavity mirror and the output cavity mirror are coated with films to obtain laser output at the band of 560-600 nm; the two large faces of the said self-frequency-doubling crystal is cooled by heat sink and located between the input cavity mirror and the output cavity mirror.

A kind of all-solid-state high-power slab laser based on phonon band-edge emission, which is comprised of a pumping source, a focusing system, a resonant cavity and a self-frequency-doubling crystal; the said self-frequency-doubling crystal is a Yb-doped RECOB crystal cut into slab shape along the direction of the crystal's maximum effective nonlinear coefficient of its non-principal plane; by changing the cutting direction of the crystal, the phase matching of different wavelengths is realized, thus realizing laser output at the band of 560-600 nm; the said pumping source is a diode laser matrix with a wavelength of 880 nm-980 nm; the input cavity mirror and the output cavity mirror are coated with films to obtain laser output at the band of 560-600 nm; the two large faces of the said self-frequency-doubling crystal is cooled by heat sink and located between the input cavity mirror and the output cavity mirror.

A broadband optical amplifier for operation in the 2 μm visible wavelength band is based upon a single-clad Tm-doped fiber amplifier (TDFA). A compact pump source uses a combination of low-power laser diode with a fiber laser to provide a multi-watt pump beam without needing to include thermal management and/or pump wavelength stability components. The broadband optical amplifier is therefore able to be relatively compact device with fiber coupled output powers of >0.5 W CW, high small signal gain, low noise figure, and large OSNR, important for use as a versatile wideband preamplifier or power booster amplifier.

A broadband optical amplifier for operation in the 2 μm visible wavelength band is based upon a single-clad Tm-doped fiber amplifier (TDFA). A compact pump source uses a combination of low-power laser diode with a fiber laser to provide a multi-watt pump beam without needing to include thermal management and/or pump wavelength stability components. The broadband optical amplifier is therefore able to be relatively compact device with fiber coupled output powers of >0.5 W CW, high small signal gain, low noise figure, and large OSNR, important for use as a versatile wideband preamplifier or power booster amplifier.

A broadband optical amplifier for operation in the 2 μm visible wavelength band is based upon a single-clad Ho-doped fiber amplifier (HDFA). A compact pump source uses a combination of discrete laser diode with a fiber laser (which may be a dual-stage fiber laser) to create a pump output beam at a wavelength associated with creating gain in the presence of Ho ions (an exemplary pump wavelength being 1940 nm). The broadband optical amplifier may take the form of a single stage amplifier or a multi-stage amplifier, and may utilize a co-propagating pump and/or a counter-propagating pump arrangement.

A broadband optical amplifier for operation in the 2 μm visible wavelength band is based upon a single-clad Ho-doped fiber amplifier (HDFA). A compact pump source uses a combination of discrete laser diode with a fiber laser (which may be a dual-stage fiber laser) to create a pump output beam at a wavelength associated with creating gain in the presence of Ho ions (an exemplary pump wavelength being 1940 nm). The broadband optical amplifier may take the form of a single stage amplifier or a multi-stage amplifier, and may utilize a co-propagating pump and/or a counter-propagating pump arrangement.

A multi-stage thulium-doped (Tm-doped) fiber amplifiers (TDFA) is based on the use of single-clad Tm-doped optical fiber and includes a wavelength conditioning element to compensate for the nonuniform spectral response of the initial stage(s) prior to providing power boosting in the output stage. The wavelength conditioning element, which may comprise a gain shaping filter, exhibits a wavelength-dependent response that flattens the gain profile and output power distribution of the amplified signal prior to reaching the output stage of the multi-stage TDFA. The inclusion of the wavelength conditioning element allows the operating bandwidth of the amplifier to be extended so as to encompass a large portion of the eye-safe 2 μm wavelength region.

A multi-stage thulium-doped (Tm-doped) fiber amplifiers (TDFA) is based on the use of single-clad Tm-doped optical fiber and includes a wavelength conditioning element to compensate for the nonuniform spectral response of the initial stage(s) prior to providing power boosting in the output stage. The wavelength conditioning element, which may comprise a gain shaping filter, exhibits a wavelength-dependent response that flattens the gain profile and output power distribution of the amplified signal prior to reaching the output stage of the multi-stage TDFA. The inclusion of the wavelength conditioning element allows the operating bandwidth of the amplifier to be extended so as to encompass a large portion of the eye-safe 2 μm wavelength region.