Laser systems are provided with a semiconductor laser having an emission face, a drive circuit adapted to supply electric energy to the semiconductor laser to cause the semiconductor laser to emit a beam; a user input system adapted to sense a user input action; a controller adapted to control the drive circuit based upon the sensed user input action; a housing within which the laser is positioned and having an opening with a window through which the semiconductor laser can emit the beam. The semiconductor laser is positioned to emit the beam through the window and the emission face of the semiconductor laser is sized to cause a divergence in the beam to create a patterned emission with a predetermined shape without passing the beam through beam shaping optics.

Laser systems are provided with a semiconductor laser having an emission face, a drive circuit adapted to supply electric energy to the semiconductor laser to cause the semiconductor laser to emit a beam; a user input system adapted to sense a user input action; a controller adapted to control the drive circuit based upon the sensed user input action; a housing within which the laser is positioned and having an opening with a window through which the semiconductor laser can emit the beam. The semiconductor laser is positioned to emit the beam through the window and the emission face of the semiconductor laser is sized to cause a divergence in the beam to create a patterned emission with a predetermined shape without passing the beam through beam shaping optics.

A header for a semiconductor package, includes an eyelet having a through hole penetrating the eyelet from an upper surface to a lower surface of the eyelet, a first lead inserted inside the through hole, and an insulating substrate disposed on the upper surface of the eyelet, and provided with a first through hole at a position overlapping one end of the first lead in a plan view. The insulating substrate has a thermal conductivity lower than a thermal conductivity of the first lead. A first conductive layer is formed on an inner wall defining the first through hole, and the first conductive layer extends to an upper surface of the insulating substrate. The one end of the first lead is electrically connected to the first conductive layer, and a space is provided above the one end of the first lead inside the first through hole.

Disclosed are an optical device capable of precise adjustment of optical output intensity, and a method for manufacturing an optical device. An optical device including a laser diode, according to one aspect of the present embodiment, comprises: a laser diode for outputting light having a predetermined wavelength; an optical output unit in which output light of the laser diode is optically coupled and the output of the optical device takes place; and an optical isolator disposed between the laser diode and the optical output unit. The output light of the laser diode passes through the optical isolator and the output of the optical device takes place through the optical output unit, and the intensity of the output light of the optical device is determined by the rotation of the optical isolator.

An optical assembly includes a substrate; an optical subassembly that is disposed on a region of a surface of the substrate; a housing that is disposed on another region of the surface of the substrate; a first optical element that is disposed on a first support component of the housing; and a second optical element that is disposed on a second support component of the housing. The optical subassembly includes an integrated circuit (IC) driver chip; a redistribution layer (RDL) structure that is disposed on a surface of the IC driver chip, wherein the RDL structure includes a cavity; and a vertical cavity surface emitting laser (VCSEL) device disposed on a region of the surface of the RDL structure that is within the cavity of the RDL structure.

An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

Provided is a thermoelectric cooler built-in stem, including a first stem member on a top face of which a temperature controlled target device such as an optical module or the like is mounted, a second stem member which opposes to the first stem member each other, and a thermoelectric cooler being sandwiched between the first stem member and the second stem member, for controlling the temperature controlled target device, whereby a space between the first stem member and the second stem member is filled by an insulating resin whose thermal conductivity is low.

Provided is a thermoelectric cooler built-in stem, including a first stem member on a top face of which a temperature controlled target device such as an optical module or the like is mounted, a second stem member which opposes to the first stem member each other, and a thermoelectric cooler being sandwiched between the first stem member and the second stem member, for controlling the temperature controlled target device, whereby a space between the first stem member and the second stem member is filled by an insulating resin whose thermal conductivity is low.