It is an object of the present invention to provide a small and simply-structured light-source device. A light-source device according to the present invention includes a laser light source section, a stem on which the laser light source section is mounted, a cap with an opening, the cap being bonded to the stem in such a manner that the cap covers the laser light source section, a lens holder joined to an outer surface of the cap in such a manner that the lens holder extends over the opening, and a collimating lens supported by the lens holder, the collimating lens collimating a light ray emitted from the laser light source section and then passing through the opening.

A lens cap for a transistor outline (TO) package is provided that has an inner diameter of less than 4 mm. The lens cap includes a metal shell with a wall thickness of less than 0.2 mm and a thinned area surrounding the lens so that in the thinned area the wall thickness is reduced by at least 35%.

A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

A quantum interference device includes an atomic cell, a light source, a light detector, a package, and a reflective portion. The atomic cell has alkali metal atoms disposed within, and the light source emits light to excite the alkali metal atoms in the atomic cell. The light detector detects light transmitted through the atomic cell. The package defines an internal space and houses at least the light source. The reflective portion is provided between an inner surface of the package and the light source, and has reflectance to an electromagnetic wave having a wavelength of 4 μm, where the reflectance is greater than or equal to 50%.

The light source is based on a high-efficiency solid-state laser source of the excitation coherent radiation and a single crystal phosphor which is machined in a form of an optic element for emitted light parameterisation. The single crystal phosphor is produced from a single crystal material on the basis of garnets of the (A.sub.x, Lu.sub.1-x).sub.aAl.sub.bO.sub.12:Ce.sub.c general formula or from a single crystal material on the basis of perovskite structure of the B.sub.1-qAlO.sub.3:D.sub.q general formula. The efficient light source shall be utilized e.g. in the automotive industry.

Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11, a cap 12 that is attached to an upper surface of the stem 11, a semiconductor laser element 13, and a power-feeding member 14 that is at least partially buried in the stem 11. The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13, and an external terminal 33. The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11, and an attaching surface 11b that is attached to a mounting object is provided in a lower surface of the stem 11.

A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.

An illuminator and a display capable of achieving miniaturization are provided with use of a plurality of light sources emitting light with two or more kinds of wavelengths. In the light source unit 11, a red-color laser 11R, a green-color laser 11G, a blue-color laser 11B, a microlens section 116, and a microprism 117 are integrated on a base material. Each laser beam emitted from each of the laser light sources is transmitted through the microlens section 116, and then, comes into the microprism 117. In the microprism 117, optical path conversion is performed to shorten the distance between the optical paths of the incident light beams (to allow the optical axes of the incident light beams to be closer to each other). Due to the above-described integration, the optical paths of the laser beams are allowed to be synthesized using the microscopic-scaled microlens section and microprisms.

A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

A heat dissipation base is suitable for a transistor outline packaged laser diode. The heat dissipation base includes a basal wall and a heat dissipation wall extending outward from one side of the basal wall, the side surface of the basal wall defines a can-shaped packaging area. The heat dissipation wall is located in the packaging area and has a bearing surface. The heat dissipation base further includes an extension wall extending outward from the other side of the basal wall, the basal wall, the heat dissipation wall, and the extension wall are integrated, and the extension wall includes a primary cooling surface for in contact with an external heat dissipation element. The present invention also provides a transistor outline packaged laser diode using the above-mentioned heat dissipation base.