The present disclosure is directed to systems and methods useful for providing a low profile metalens array that provides a relatively uniform far-field illumination in the visible and/or near-infrared electromagnetic spectrum using a plurality of vertical cavity surface emitting lasers (VCSELs) disposed a distance from a plurality of metalenses forming a metalens array, in which the VCSELs are decorrelated from the metalenses forming the metalens array.

“TRI-DIODE FOR LASER THERAPY AND TRI-DIODE-BASED EQUIPMENT FOR USE IN LASER THERAPY”, this invention patent application proposes a tri-diode used to generate a particular type of laser that can be used to treat all types of cellular lesions, both in humans and in other animals. The invention can be applied to any age of patient and any lesion condition. The tri-diode proposed generates a laser from a combination of three specific molecules, namely: zinc, phosphorus or phosphate and aluminum; it is used to encourage cell regeneration, having a useable power of between 1.2 W and 1.5 W in each diode and a total power of between 3.6 W and 4.5 W, with a wavelength of between 780 and 808 nm; the zinc, phosphorus or phosphate and aluminum molecules can be combined in up to 26 mixtures.

“TRI-DIODE FOR LASER THERAPY AND TRI-DIODE-BASED EQUIPMENT FOR USE IN LASER THERAPY”, this invention patent application proposes a tri-diode used to generate a particular type of laser that can be used to treat all types of cellular lesions, both in humans and in other animals. The invention can be applied to any age of patient and any lesion condition. The tri-diode proposed generates a laser from a combination of three specific molecules, namely: zinc, phosphorus or phosphate and aluminum; it is used to encourage cell regeneration, having a useable power of between 1.2 W and 1.5 W in each diode and a total power of between 3.6 W and 4.5 W, with a wavelength of between 780 and 808 nm; the zinc, phosphorus or phosphate and aluminum molecules can be combined in up to 26 mixtures.

A micro light emitting diode display includes a display module and a hydrophobic layer. The display module includes a substrate, an electrode layer, and a micro light emitting diode device. The substrate has a first surface, a second surface opposite to the first surface and at least one air passage extending from the first surface to the second surface. The electrode layer is disposed on and in contact with the first surface of the substrate. The air passage has an opening on the first surface of the substrate, and the electrode layer is spaced apart from the opening. The micro light emitting diode device is disposed on the electrode layer and has a light emitting area that is less than or equal to 2500 μm.sup.2. The hydrophobic layer at least partially covers a side of the display module.

A micro light emitting diode display includes a display module and a hydrophobic layer. The display module includes a substrate, an electrode layer, and a micro light emitting diode device. The substrate has a first surface, a second surface opposite to the first surface and at least one air passage extending from the first surface to the second surface. The electrode layer is disposed on and in contact with the first surface of the substrate. The air passage has an opening on the first surface of the substrate, and the electrode layer is spaced apart from the opening. The micro light emitting diode device is disposed on the electrode layer and has a light emitting area that is less than or equal to 2500 μm.sup.2. The hydrophobic layer at least partially covers a side of the display module.

An electronic device includes a base substrate having a mounting face. An electronic chip is fastened onto the mounting face of the base substrate. A transparent encapsulation structure is bonded onto the base substrate. The transparent encapsulation structure includes a housing with an internal cavity defining a chamber housing the electronic chip. The encapsulation structure has an external face that supports a light-filtering optical wafer located facing an optical element of the electronic chip. An opaque cover covers the transparent encapsulation structure and includes a local opening facing the light-filtering optical wafer.

An electronic device includes a base substrate having a mounting face. An electronic chip is fastened onto the mounting face of the base substrate. A transparent encapsulation structure is bonded onto the base substrate. The transparent encapsulation structure includes a housing with an internal cavity defining a chamber housing the electronic chip. The encapsulation structure has an external face that supports a light-filtering optical wafer located facing an optical element of the electronic chip. An opaque cover covers the transparent encapsulation structure and includes a local opening facing the light-filtering optical wafer.

A color emissive LED array comprising a backplane and a plurality of color emissive LED units disposed in an array on the backplane, whereas the thickness of a first color emissive LED unit is less than the thickness of a second color emissive LED unit and less than the thickness of the third color emissive LED unit; wherein the color emissive LED units is formed by at least one of vertical configuration structure or flip chip configuration LED structure.

The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.