Embodiments described herein may be related to apparatuses, processes, and techniques related to thermally and/or electrically coupling a thermal die to the surface of a photonic integrated circuit (PIC) within an open cavity in a substrate, where the thermal die is proximate to a laser on the PIC. Other embodiments may be described and/or claimed.

Disclosed are an optical device capable of precise adjustment of optical output intensity, and a method for manufacturing an optical device. An optical device including a laser diode, according to one aspect of the present embodiment, comprises: a laser diode for outputting light having a predetermined wavelength; an optical output unit in which output light of the laser diode is optically coupled and the output of the optical device takes place; and an optical isolator disposed between the laser diode and the optical output unit. The output light of the laser diode passes through the optical isolator and the output of the optical device takes place through the optical output unit, and the intensity of the output light of the optical device is determined by the rotation of the optical isolator.

The present disclosure discloses an optical module including a circuit board and a light-emitting assembly. In the light-emitting assembly, a wavelength tuning mechanism is formed of a semiconductor optical amplification chip, a silicon optical chip and a semiconductor refrigerator. The semiconductor optical amplification chip may provide a plurality of wavelengths, and a wavelength selection is carried out by an optical filter in the silicon optical chip; a temperature adjustment for the optical filter is achieved by the semiconductor refrigerator, so as to further adjust a performance of the filter for wavelength selection. The above device is provided in a housing to facilitate packaging of the devices.

A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.

A semiconductor-fiber-laser assembly is provided that includes a pumping module, an active optical fiber and an assembling board. The active optical fiber is provided on an upper surface of the assembling board, the pumping module is provided on a surface of the assembling board that is the same as or opposite to the upper surface; and input-side and output-side optical-fiber gratings are provided at two ends of the active optical fiber, to form a laser resonator between the input-side and output-side optical-fiber gratings. The pumping module includes a plurality of semiconductor-laser single emitters, a collimating-lens group and a mirror group that are sequentially arranged, and light beams from the semiconductor-laser single emitters pass through the mirror group to realize beam combination.

A semiconductor-fiber-laser assembly is provided that includes a pumping module, an active optical fiber and an assembling board. The active optical fiber is provided on an upper surface of the assembling board, the pumping module is provided on a surface of the assembling board that is the same as or opposite to the upper surface; and input-side and output-side optical-fiber gratings are provided at two ends of the active optical fiber, to form a laser resonator between the input-side and output-side optical-fiber gratings. The pumping module includes a plurality of semiconductor-laser single emitters, a collimating-lens group and a mirror group that are sequentially arranged, and light beams from the semiconductor-laser single emitters pass through the mirror group to realize beam combination.

A light source module that emits a combined laser beam, and includes: a plurality of semiconductor laser elements; and a control circuit that controls power of a laser beam emitted by each of the semiconductor laser elements. The semiconductor laser elements include: a first element group that emits a first laser beam; and a second element group that emits a second laser beam. The combined laser beam includes at least one of the first laser beam or the second laser beam. The control circuit maintains an average combined-beam wavelength that is an average wavelength of the combined laser beam constant for a change in power of the combined laser beam. When the power of the first laser beam and the power of the second laser beam are equal to each other, an average wavelength of the first laser beam is longer than an average wavelength of the second laser beam.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

Apparatus include a plurality of laser diodes configured to emit respective laser diode beams having perpendicular fast and slow beam divergence axes mutually perpendicular to respective beam axes, and beam shaping optics configured to receive the laser diode beams and to circularize an ensemble image space and NA space of the laser diode beams at an ensemble coupling plane. In selected examples, beam shaping optics include variable fast axis telescopes configured to provide variable fast axis magnification and beam displacement.

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.