This optical transmission module includes: a plurality of semiconductor lasers provided on a sub-mount fixed to a side surface of a block fixed on a plate-shaped stem made of metal; and a cap with a lens fixed thereto, the cap covering all members placed above the stem. The same number of lead pins as the semiconductor lasers are provided so as to respectively penetrate through a plurality of holes formed in the stem. The lead pins and the semiconductor lasers are electrically connected to each other, respectively. Single-phase electrical signals with the stem as a ground potential are respectively applied to the semiconductor lasers from an external power supply, through the lead pins, respectively, so as to cause modulation and oscillation of the semiconductor lasers.

An optoelectronic component is provided that includes a radiation-emitting semiconductor chip, which emits electromagnetic radiation from a radiation exit surface during operation, a carrier comprising at least two first contact points, and a cover including at least two second contact points, wherein the at least two first contact points and the at least two second contact points are electrically conductively and/or thermally conductively connected to one another by a first plurality of nanowires and a second plurality of nanowires, and the nanowires provide a mechanically stable connection between the carrier and the cover. In addition, a method for producing an optoelectronic component is provided.

An optoelectronic component is provided that includes a radiation-emitting semiconductor chip, which emits electromagnetic radiation from a radiation exit surface during operation, a carrier comprising at least two first contact points, and a cover including at least two second contact points, wherein the at least two first contact points and the at least two second contact points are electrically conductively and/or thermally conductively connected to one another by a first plurality of nanowires and a second plurality of nanowires, and the nanowires provide a mechanically stable connection between the carrier and the cover. In addition, a method for producing an optoelectronic component is provided.

A light-emitting apparatus includes: a body having an inner space and an opening, the body incorporating at least one semiconductor laser element the body being made of a metal; and a sealing glass member joined to the body, to hermetically seal the inner space. The sealing glass member has a surface adjacent to the body, the surface of the sealing glass member being provided with a base joint layer in a joint region where the sealing glass member and the body are joined together, the base joint layer being made of a metal having a thermal expansion coefficient that falls between a thermal expansion coefficient of the sealing glass member and a thermal expansion coefficient of the metal constituting the body. The sealing glass member is joined to the body with the base joint layer and a solder-containing joint layer interposed between the sealing glass member and the body.

A light emitting device includes: laser diodes (LDs); a planar lightwave circuit (PLC) including optical waveguides; and a lens. The optical waveguides include: a first optical waveguide to receive first light emitted from a first LD and to emit the first light from a first light-exiting end; and a second optical waveguide to receive second light emitted from a second LD and to emit the second light from a second light-exiting end. The first light-exiting end causes refraction such that the first light exits in a first direction. The second light-exiting end causes refraction such that the second light exits in a second direction. A distance from the first light-exiting end to the lens along the first direction is shorter than a distance from the second light-exiting end to the lens along the second direction.

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

An optical transmission module includes a metal base including a signal terminal which extends along a first direction, a dielectric block including a dielectric substance, the dielectric block having a semiconductor plane, an optical plane, and a thermal plane, the semiconductor plane and the optical plane being parallel to the first direction, the thermal plane crossing the first direction, and the semiconductor plane being provided between the optical plane and the thermal plane in the first direction, an optical semiconductor element mounted on the semiconductor plane, the optical semiconductor element being electrically connected with the signal terminal, a temperature regulating element provided between the dielectric block and the metal base in the first direction, the temperature regulating element being contacted with the thermal plane, and a lens mounted on the optical plane.

An optical transmission module includes a metal base including a signal terminal which extends along a first direction, a dielectric block including a dielectric substance, the dielectric block having a semiconductor plane, an optical plane, and a thermal plane, the semiconductor plane and the optical plane being parallel to the first direction, the thermal plane crossing the first direction, and the semiconductor plane being provided between the optical plane and the thermal plane in the first direction, an optical semiconductor element mounted on the semiconductor plane, the optical semiconductor element being electrically connected with the signal terminal, a temperature regulating element provided between the dielectric block and the metal base in the first direction, the temperature regulating element being contacted with the thermal plane, and a lens mounted on the optical plane.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.