Disclosed is a VCSEL array with improved optical properties. According to one aspect of the present embodiment, a VCSEL array has improved output light characteristics by minimizing the effects of resistance, inductance, and capacitance inevitably caused in a package.

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

A light-emitting device includes: a substrate comprising a base; a semiconductor laser element disposed on an upper surface of the base; a sealing member located above the base and fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens member fixed to the sealing member by adhesive, the lens member comprising a lens section through which light emitted from the semiconductor laser element passes. A space between the sealing member and the lens member is open to an area outside the light-emitting device.

A light-emitting device includes: a substrate comprising a base; a semiconductor laser element disposed on an upper surface of the base; a sealing member located above the base and fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens member fixed to the sealing member by adhesive, the lens member comprising a lens section through which light emitted from the semiconductor laser element passes. A space between the sealing member and the lens member is open to an area outside the light-emitting device.

A system and method for tuning and infrared source laser in the Mid-IR wavelength range. The system and method comprising, at least, a plurality of individually tunable emitters, each emitter emitting a beam having a unique wavelength, a grating, a mirror positioned after the grating to receive at least one refracted order of light of at least one beam and to redirect the beam back towards the grating, and a micro-electro-mechanical systems device containing a plurality of adjustable micro-mirrors.

A semiconductor laser device includes: a semiconductor laser element; a lower base provided with the semiconductor laser element; an upper base that is electrically insulated from the lower base, and sandwiches the semiconductor laser element together with the lower base; a lens that allows laser light that has exited from semiconductor laser element to enter, concentrates the laser light that has entered, and allows the laser light that has been concentrated to exit; and a holder that holds the lens. The holder is connected to the upper base.

A semiconductor laser device includes: a semiconductor laser element; a lower base provided with the semiconductor laser element; an upper base that is electrically insulated from the lower base, and sandwiches the semiconductor laser element together with the lower base; a lens that allows laser light that has exited from semiconductor laser element to enter, concentrates the laser light that has entered, and allows the laser light that has been concentrated to exit; and a holder that holds the lens. The holder is connected to the upper base.

Provided is a light-emitting device and a method for manufacturing the same which allow the filling performance of the film that fills the space around light-emitting elements to be improved. The light-emitting device according to the disclosure includes a substrate, a plurality of light-emitting elements and a plurality of electrodes sequentially provided on a first surface of the substrate, and a film provided on the first surface of the substrate to surround the light-emitting elements, and when the first surface is a bottom surface of the substrate, the lowermost part of a bottom surface of the film is provided in a higher position than a bottom surface of the electrode. In this way, for example, the film is formed before the substrate is provided on another substrate, so that the filling performance of the film that fills the space around the light-emitting elements can be improved.

An optical assembly includes an integrated circuit (IC) driver chip; an optical subassembly disposed on the IC driver chip that includes: a vertical cavity surface emitting laser (VCSEL) device, an optical element disposed above a top surface of the VCSEL device, and two or more attachment structures disposed between the VCSEL device and the optical element; and two or more additional attachment structures disposed between the IC driver chip and the optical subassembly. The VCSEL device includes: a cathode contact disposed on the top surface of the VCSEL device, and an anode contact disposed on the top surface of the VCSEL device. The optical element includes two or more conductive traces on a bottom surface of the optical element. The two or more attachment structures are disposed between the two or more conductive traces of the optical element, and the cathode contact and the anode contact of the VCSEL device.