Methods, systems, and apparatus, including medium-encoded computer program products, for a universal laser system including a laser operable to produce an infrared laser beam for a range of wavelengths, an optics assembly operable to focus and direct the laser beam, and electronics communicatively coupled with the laser and the optics assembly, the electronics being configured to control the laser and the optics assembly, where the laser is configured to produce the infrared laser beam at wavelengths in the range of wavelengths that overlap with absorption peaks due to higher-order, non-linear oscillations of molecular bonds of each polymeric material of at least ten different polymeric materials, thereby generating heat from absorption of photon energy from the infrared laser beam.

In some implementations, an optical assembly includes a substrate that includes a thermally conductive core, an IC driver chip that is disposed on a first surface of the substrate, and a VCSEL device that includes an electrically insulated surface that is disposed on the thermally conductive core of the substrate within a cavity formed in the second surface of the substrate. The VCSEL device includes a cathode contact disposed on a surface of the VCSEL device and an anode contact disposed on the surface of the VCSEL device. The VCSEL device includes a plurality of emitters and a microlens component that is disposed over the plurality of emitters on the surface of the VCSEL device.

A laser device is provided. The laser device includes a bottom plate, a frame body, a heat sink and a light-emitting chip. The light-emitting chip is located on a surface of the heat sink away from the bottom plate. The light-emitting chip includes a plurality of first protrusions and/or a plurality of first depressions, the plurality of first protrusions and/or the plurality of first depressions are located on a first surface of the light-emitting chip; the heat sink includes a plurality of second depressions and/or a plurality of second protrusions, the plurality of second depressions and/or the plurality of second protrusions are located on a second surface of the heat sink; the plurality of first protrusions are located in the plurality of second depressions, and the plurality of second protrusions are located in the plurality of first depressions.

A beam generating device includes a semiconductor substrate, having an optical passband. A first array of vertical-cavity surface-emitting lasers (VCSELs) is formed on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband. A second array of microlenses is formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs. The VCSELs are configured to be driven to emit the laser beams in predefined groups in order to change a characteristic of the laser beams.

A beam generating device includes a semiconductor substrate, having an optical passband. A first array of vertical-cavity surface-emitting lasers (VCSELs) is formed on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband. A second array of microlenses is formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs. The VCSELs are configured to be driven to emit the laser beams in predefined groups in order to change a characteristic of the laser beams.

A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

A metal stem includes a cylindrical portion in which an FPC inserting portion is formed, and a base standing upright from one plane of the cylindrical portion. A tubular lens cap with one open end is fixed to a peripheral portion of the one plane of the cylindrical portion, and has a lens mounted on a bottomed portion. A substrate mounted on one plane of the base includes a signal wiring layer and a ground wiring layer. An optical semiconductor element is mounted on the substrate and has a signal terminal connected to the signal wiring layer of the substrate, and a ground terminal connected to the ground wiring layer of the substrate. An FPC substrate is disposed so as to pass through the FPC inserting portion and to face the one plane of the base. The FPC substrate includes a signal wiring layer connected to the signal wiring layer of the substrate with a metal wire.

Laser Side Mode Suppression Ratio (SMSR) control is provided via a logic controller configured to measure an SMSR of a carrier wave upstream of a modulator and measure an Average Optical Power (AOP) of the carrier wave downstream of the modulator; transmit a bias voltage based on the SMSR and the AOP to a laser driver for a laser generating the carrier wave; and transmit an attenuation level based on the SMSR and the AOP to a Variable Optical Attenuator (VOA) upstream of the modulator. In various embodiments the attenuation level and bias voltage can rise or fall together, or one may rise and one may fall to ensure the output optical signal meets specified SMSR and AOP values.

Laser Side Mode Suppression Ratio (SMSR) control is provided via a logic controller configured to measure an SMSR of a carrier wave upstream of a modulator and measure an Average Optical Power (AOP) of the carrier wave downstream of the modulator; transmit a bias voltage based on the SMSR and the AOP to a laser driver for a laser generating the carrier wave; and transmit an attenuation level based on the SMSR and the AOP to a Variable Optical Attenuator (VOA) upstream of the modulator. In various embodiments the attenuation level and bias voltage can rise or fall together, or one may rise and one may fall to ensure the output optical signal meets specified SMSR and AOP values.