Provided is an optical subassembly, which is compact, is easy to manufacture, and has satisfactory high-frequency characteristics. The optical subassembly includes: an eyelet including a first surface, a second surface and a plurality of through-holes; a plurality of lead terminals; a relay substrate including a lead connection surface and a first bonding surface and having first and second conductor patterns formed across the lead connection surface and the first bonding surface; a device mounting unit including a second bonding surface having formed thereon third and fourth conductor patterns; and an optical device configured to convert one of an optical signal and the differential electrical signals into the other. The first and second conductor patterns on the first bonding surface are connected to the third and fourth conductor patterns by bonding wires, respectively, and the first and second bonding surfaces have normal directions in the same direction.

The present disclosure provides a laser diode module. The laser diode module includes a substrate including a first surface and a second surface opposite to each other; a cover disposed on the first surface of the substrate, and an accommodation space being formed between the substrate and the cover; and a laser diode die disposed in the accommodation space.

An embodiment of a semiconductor package includes a leadframe having leads, a mold compound partly encasing the leadframe so that the leads protrude from the mold compound, a power transistor die attached to the leadframe at a first side of the leadframe, and a driver die attached to the leadframe at a second side of the leadframe opposite the first side so that the power transistor die and the driver die are disposed in a stacked arrangement. The driver die is configured to control the power transistor die. The driver die is in direct electrical communication with the power transistor die only through the leadframe and any interconnects which attach the power transistor die and the driver die to the leadframe. Corresponding methods of manufacturing the semiconductor package are also described.

Provided is an optical module comprising a plate-like metal stem and a semiconductor optical modulation element mounted to a dielectric substrate provided on one side of the metal stem, wherein the metal stem has a metal stem penetration section in which a metal lead pin is inserted coaxially in a penetration hole which is formed in the metal stem and a dielectric member is provided to fill the penetration hole around the outer circumference of the lead pin, and a signal for modulation is supplied to the semiconductor optical modulation element connected in parallel with a terminal matching circuit, from the other side of the metal stem via the metal stem penetration section, wherein the terminal matching circuit is configured by a series connecting body which is comprised of a first resistor and a parallel body which is comprised of a second resistor and a capacitor.

An optical module includes: a stem including a first surface and a second surface opposite to the first surface; a thermoelectric cooler including a heat-releasing substrate fixed to the first surface; a semiconductor laser element attached to the thermoelectric cooler; a cap fixed to the first surface and covering the thermoelectric cooler and the semiconductor laser element; a lens fixed to the cap; and a restriction body fixed to the second surface. The linear thermal expansion coefficients of the heat-releasing substrate and the restriction body are smaller than the linear thermal expansion coefficient of the stem.

An optical module includes: a stem including a first surface and a second surface opposite to the first surface; a thermoelectric cooler including a heat-releasing substrate fixed to the first surface; a semiconductor laser element attached to the thermoelectric cooler; a cap fixed to the first surface and covering the thermoelectric cooler and the semiconductor laser element; a lens fixed to the cap; and a restriction body fixed to the second surface. The linear thermal expansion coefficients of the heat-releasing substrate and the restriction body are smaller than the linear thermal expansion coefficient of the stem.

A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GND line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).

Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.

An embodiment of a semiconductor package includes a leadframe and a mold compound partly encasing the leadframe so that leads protrude from the mold compound and at least two die pads have a surface at a first side of the leadframe which is not covered by the mold compound. A laser module is attached to the surface of the at least two die pads which is not covered by the mold compound. A driver die is attached to the leadframe at a second side of the leadframe opposite the first side so that the laser module and the driver die are disposed in a stacked arrangement, the driver die configured to control the laser module. The driver die is in direct electrical communication with the laser module only through the leadframe and any interconnects which attach the laser module and driver die to the leadframe.

A semiconductor laser device includes a semiconductor laser element, a base material supporting the semiconductor laser element, and a wiring portion formed on the base material and constituting a conduction path to the semiconductor laser element. The base material includes a mounting face oriented to one side in a thickness direction of the base material and having the semiconductor laser element mounted thereon, while also including an emission part located on one side with respect to the semiconductor laser element in a first direction perpendicular to the thickness direction. Light from the semiconductor laser element is emitted through the emission part to the outside.