A semiconductor package is manufactured by physically attaching a side emitting laser diode to a floor portion of a recessed flat no-leads (FNL) package having a wall extending from and surrounding a perimeter of a recessed floor portion. The attached side emitting laser diode is oriented to direct a laser beam toward an opposing portion of the wall. The FNL package is singulated into a first piece and a second piece along a singulation plane through the FNL package wall and floor portion between the side emitting laser diode and the opposing portion of the wall. After singulation the opposing portion of the wall is in the second piece and the side emitting laser diode is in the first piece.

An embodiment of a semiconductor package includes a leadframe and a mold compound partly encasing the leadframe so that leads protrude from the mold compound and at least two die pads have a surface at a first side of the leadframe which is not covered by the mold compound. A laser module is attached to the surface of the at least two die pads which is not covered by the mold compound. A driver die is attached to the leadframe at a second side of the leadframe opposite the first side so that the laser module and the driver die are disposed in a stacked arrangement, the driver die configured to control the laser module. The driver die is in direct electrical communication with the laser module only through the leadframe and any interconnects which attach the laser module and driver die to the leadframe.

The invention relates to an assembly comprising an electric component. The component has an electric part, a control circuit, and a capacitor. At least two lead frames are provided which are embedded into a housing. The part, the control circuit, and the capacitor are arranged on the lead frames, and the control circuit is designed to charge the capacitor and to supply the part with current from the capacitor in a clocked manner. The component has two contacts, and the component is arranged on a support. The support has an electrically conductive layer and the two contacts are connected to the layer in an electrically conductive manner. At least one first part of one lead frame is arranged at a greater distance from the electrically conductive layer than the second lead frame.

In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

An optoelectronic component includes a housing body comprising a mounting face and a leadframe embedded into the housing body. The leadframe comprises a first and a second leadframe section, wherein the leadframe sections each comprise a contact region and a terminal region. While the contact regions are exposed at the mounting face, the terminal regions project laterally from the housing body. The housing body is completely enclosed by a molding material, wherein the terminal regions are not enclosed by the molding material.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 m or more and 0.01 m or less.

A light emitting module includes a light emitting device including first to sixth electrodes and a holder including first to sixth terminals. An insulator body of the holder at least partially surrounds the light emitting device in a plan view with the light emitting device being interposed between a first inner edge and a second inner edge of the insulator body, and a third inner edge linking the first and second inner edges. The first terminal projects from a third inner edge and is connected to the first electrode. The second and third terminals project from the first inner edge and are connected to the second and third electrodes, respectively. The fourth terminal projects from the third inner edge and connected to the fourth electrode. The fifth and sixth terminals project from the second inner edge and are connected to the fifth and sixth electrodes, respectively.

An optoelectronic module includes a spacer with an optical component mounting surface, a fluid permeable channel, and a module mounting surface. The fluid permeable channel and module mounting surface allow the channels to be sealed to foreign matter during certain manufacturing steps and to remain free from blockages, such as solidified flux, during certain manufacturing steps. Further, the channels can permit heat to escape from the optoelectronic module during operation.

A driver circuit for driving a laser diode is described herein. In accordance with a first exemplary embodiment the driver circuit includes a first electronic switch connected to an output node that is configured to be operably connected to a laser diode. The electric connection between the first electronic switch and the output node has a first inductance. The driver circuit further includes a bypass circuit that is coupled to the output node and configured to take over, when activated, the current supplied to the output node via the first electronic switch, thus magnetizing the first inductance.

A semiconductor light emitting device includes a substrate a semiconductor light emitting element that is disposed on the substrate and that emits light along a direction substantially parallel to a main surface of the substrate a wavelength conversion element that is disposed on a light emitting side of the semiconductor light emitting element, that absorbs a portion of the light emitted from the semiconductor light emitting element, and that emits light having a wavelength different from that of the absorbed light; and a holding member that is disposed on the substrate and holds the wavelength conversion element.