A circuit (e.g., for use in a time-of-flight camera projector module) may include a top metal layer having an anode and a cathode, one or more capacitors connected to the anode, a vertical-cavity surface-emitting laser connected to the anode and the cathode, and a driver connected to the cathode. The circuit may further include a bottom metal layer connected to ground and arranged below the top metal layer, and a dielectric layer separating the top metal layer and the bottom metal layer. In some implementations, the dielectric layer has a thickness under sixty micrometers and a thermal resistance under fifteen degrees Celsius per watt. Accordingly, a current loop flowing vertically across the dielectric layer has a low self-inductance based on the thickness of the dielectric layer and the bottom metal layer is arranged to dissipate heat generated by the current loop flowing vertically across the dielectric layer.

A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.

A phosphor integrated laser-based light source includes a thermally conductive material arranged on a package base adjacent to a laser diode chip and an optically transparent material coupled to the thermally conductive material. A groove extends between the thermally conductive material and the optically transport material and is aligned to receive electromagnetic radiation from the laser diode chip. A wavelength conversion material is coupled to the optically transparent material and is configured to receive at least a portion of the electromagnetic radiation emitted into the groove and transmitted through the optically transparent material. A reflective material surrounds sides of the optically transparent material and the wavelength conversion material.

A phosphor integrated laser-based light source includes a thermally conductive material arranged on a package base adjacent to a laser diode chip and an optically transparent material coupled to the thermally conductive material. A groove extends between the thermally conductive material and the optically transport material and is aligned to receive electromagnetic radiation from the laser diode chip. A wavelength conversion material is coupled to the optically transparent material and is configured to receive at least a portion of the electromagnetic radiation emitted into the groove and transmitted through the optically transparent material. A reflective material surrounds sides of the optically transparent material and the wavelength conversion material.

A light emitting device includes a base; a plurality of semiconductor laser elements disposed on the base and configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member disposed on the base and configured to reflect light from the semiconductor laser elements; a surrounding part disposed on the base and surrounding the semiconductor laser elements and the reflecting member; a wiring part disposed on the base so as to extend to a location outside of the surrounding part; a radiating body disposed on the surrounding part and having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.

A light emitting device includes a base; a plurality of semiconductor laser elements disposed on the base and configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member disposed on the base and configured to reflect light from the semiconductor laser elements; a surrounding part disposed on the base and surrounding the semiconductor laser elements and the reflecting member; a wiring part disposed on the base so as to extend to a location outside of the surrounding part; a radiating body disposed on the surrounding part and having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.

Embodiments of the disclosure provide control systems and methods for controlling a pulsed laser diode and a sensing device including a pulsed laser diode. An exemplary control system includes a distance detector configured to generate a distance signal indicating a distance between the pulsed laser diode and an object reflecting pulsed laser beams emitted by the pulsed laser diode. The control system may also include a controller configured to dynamically control power supplied to the pulse laser diode based on the distance signal.

Embodiments of the disclosure provide control systems and methods for controlling a pulsed laser diode and a sensing device including a pulsed laser diode. An exemplary control system includes a distance detector configured to generate a distance signal indicating a distance between the pulsed laser diode and an object reflecting pulsed laser beams emitted by the pulsed laser diode. The control system may also include a controller configured to dynamically control power supplied to the pulse laser diode based on the distance signal.