This application provides an optical module, and relates to the field of optical communication. An optical module provided in the embodiments of this application includes a laser box and a silicon photonic chip that are enclosed and packaged by an upper enclosure part and a lower enclosure part. The laser box is disposed on and is in contact with the surface of the silicon photonic chip by the side wall or the base. The laser chip is disposed on the top plane of the laser box. The top plane is in contact with the upper enclosure part for heat dissipation, so as to help heat generated by the laser chip be conducted to the upper enclosure part via the top plane, so that the heat generated by the laser chip is dissipated not via the silicon photonic chip.

This application provides an optical module, and relates to the field of optical communication. An optical module provided in the embodiments of this application includes a laser box and a silicon photonic chip that are enclosed and packaged by an upper enclosure part and a lower enclosure part. The laser box is disposed on and is in contact with the surface of the silicon photonic chip by the side wall or the base. The laser chip is disposed on the top plane of the laser box. The top plane is in contact with the upper enclosure part for heat dissipation, so as to help heat generated by the laser chip be conducted to the upper enclosure part via the top plane, so that the heat generated by the laser chip is dissipated not via the silicon photonic chip.

A laser module includes a gain chip, temperature sensors, a case, and a thermoelectric cooler (TEC). The gain chip emits a laser beam. One of the temperature sensors measures a first temperature of the gain chip and is encompassed by the gain chip. The other temperature sensor is adhered to the case and measures a second temperature. The TEC tunes the laser beam emitted by the gain chip to a desired wavelength by varying the first temperature of the gain chip through a set of third temperatures for various values of the second temperature. The set of third temperatures is selected from various values of the first temperature such that the laser beam emitted at the set of third temperatures is mode-hop free.

A light emitting device includes: a light emitting element; and a wavelength conversion member including: a wavelength conversion part configured to convert light emitted from the light emitting element into light having a different wavelength and to output the light having the different wavelength, an enclosing part enclosing the wavelength conversion part, and a conducting layer disposed on the enclosing part and surrounding the wavelength conversion part. The conducting layer comprises ruthenium oxide.

An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.

An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.

A quantum cascade laser device includes a QCL element and a package. A light-emitting window through which laser light emitted from the QCL element passes is provided on a side wall of the package. The light-emitting window includes a small-diameter hole, a large-diameter hole larger than the small-diameter hole, a counterbore surface having an annular shape that connects the small-diameter hole and the large-diameter hole, and a window member disposed inside the large-diameter hole. An incident surface of a window member includes a first region in which an anti-reflection film is provided, and a second region metallized and formed in an annular shape to be separated from the first region and to surround the first region. The second region is joined to the counterbore surface through a solder member.

Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

A photodetector is positioned so that imaginary lines perpendicular to an emission end surface of a first light-emitting element through first and second points, respectively, pass through the photodetector. The first and second points are two points at which an imaginary line parallel to the emission end surface through an inside of an outer edge of the first light-emitting element intersects the outer edge of the first light-emitting element in a top view. At least a part of a first wiring region is arranged in a first region between imaginary lines perpendicular to the emission end surface through third and fourth points, respectively. The third and fourth points are two points at which an imaginary line parallel to the emission end surface through an inside of an outer edge of the photodetector intersects the outer edge of the photodetector in the top view.