A Vertical Cavity Surface Emitting Laser (VCSEL) array package includes a VCSEL array chip bonded on a substrate, a support structure surrounding the VCSEL array chip, and an optical component mounted on the support structure. The support structure is molded directly on the substrate using a high thermal conductivity molding material. The support structure covers all side surfaces of the VCSEL array chip to facilitate heat transfer through the chip's sides. A transparent layer is deposited on the output surface of the VCSEL array chip, which prevents the support structure from blocking an output beam during molding.

The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

A VCSEL array has VCSEL sub-arrays having VCSELs on a substrate. The sub-arrays are electrically contacted by a first electrical contact arrangement common to the VCSELs within a respective sub-array and a second electrical contact arrangement. The second electrical contact arrangement has second electrical contacts contacting a respective VCSEL within the respective sub-array, individually. The second electrical contacts each has a second metal-semiconductor interface to a second semiconductor layer of an associated VCSEL. The second electrical contacts pump the VCSEL along a current path to the first electrical contact arrangement. Current paths between the first electrical contact arrangement and the second electrical contacts via the VCSELs have a symmetry selected out of the group of rotation symmetry, mirror symmetry, and translation symmetry. The first electrical contact arrangement and the second electrical contact arrangement are arranged on the same side of the substrate.

A VCSEL array has VCSEL sub-arrays having VCSELs on a substrate. The sub-arrays are electrically contacted by a first electrical contact arrangement common to the VCSELs within a respective sub-array and a second electrical contact arrangement. The second electrical contact arrangement has second electrical contacts contacting a respective VCSEL within the respective sub-array, individually. The second electrical contacts each has a second metal-semiconductor interface to a second semiconductor layer of an associated VCSEL. The second electrical contacts pump the VCSEL along a current path to the first electrical contact arrangement. Current paths between the first electrical contact arrangement and the second electrical contacts via the VCSELs have a symmetry selected out of the group of rotation symmetry, mirror symmetry, and translation symmetry. The first electrical contact arrangement and the second electrical contact arrangement are arranged on the same side of the substrate.

An optoelectronic package includes a substrate having a first surface and a second surface opposite to the first surface, an optoelectronic device on the first surface of the substrate, and a first conductive through via connecting the first surface and the second surface of the substrate. The optoelectronic device is electrically connected to the first conductive through via. A method for manufacturing the optoelectronic package is also provided.

In some embodiments, the present disclosure relates to a vertical cavity surface emitting laser (VCSEL) device that includes a microlens arranged over a reflector stack. The reflector stack comprises alternating reflector layers of a first material and a second material. The microlens stack includes a first lens layer, a second lens layer arranged over the first lens layer, and a third lens layer arranged over the second lens layer. The first lens layer comprises a first average concentration of a first element and has a first width. The second lens layer comprises a second average concentration of the first element greater than the first average concentration and has a second width smaller than the first width. The third lens layer comprises a third average concentration of the first element greater than the second average concentration and has a third width smaller than the second width.

In general, a MQW semiconductor laser chip with an electrically insulated P-side region and a process for forming the same is disclosed. The MQW semiconductor laser chip, also referred to herein as a MQW semiconductor laser or simply a semiconductor laser, includes a layer of electrically insulative material that extends along at least a portion of the sidewalls to minimize or otherwise reduce the potential for electrical shorts between P and N-sides of the same when utilizing P-side bonding techniques.

The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

A light source unit for thermally-assisted magnetic head includes a substrate member having a first bonding surface; a light source assembly attached on the first bonding surface of the substrate member and having a second bonding surface; and a heater circuit assembly formed between the substrate member and the light source assembly, the heater circuit assembly having a heater formed on the substrate member and two leads connected at two ends of the heater, the lead being thicker than the heater, thereby a distance between the heater and the second bonding surface is farther than that between the lead and the second bonding surface. The light source unit can reduce mechanical stress and thermal conduction between a light source assembly and a substrate member, thereby improving the performance of the light source assembly and the heater.

The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.