A semiconductor laser element includes a plurality of three or more laser resonators integrated adjacent to each other in the first direction. Each laser resonator has an independent power supply electrode, a second direction which is regarded as a longitudinal direction, and an end face which is coated. A plurality of electrode pads are formed in a pad region adjacent to the laser region in the first direction. Each of the wirings for connection extends in the first direction and is electrically connected the power supply electrode of the corresponding laser resonator and the corresponding electrode pad. The thick film pad is formed on the pad region and is higher than the multilayered wiring structure of the wirings for connection.

The disclosed subject matter relates to a reliable laser light-emitting apparatus. The laser light-emitting apparatus can include a laser chip, which is sealed by a first base board having an opening, a second base board and a wavelength converting board. The wavelength converting board can be attached between the first base board and the second base board so as to be located between the opening and the laser chip. A laser beam emitted from the laser chip can be emitted from the opening via the wavelength converting board, and heats generated from the laser chip and the wavelength converting board can efficiently radiate from the first base board and the first base board. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting apparatuses, which can emit various color lights having favorable optical characteristics and which can be used for lighting units such as a headlight under the tough environments.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

A vertical cavity surface emitting laser (VCSEL) device and a method for manufacturing the VCSEL device without wire bonding process for the topmost positive electrode are disclosed. The device includes epitaxial layer, ohmic contact layer, positive electrode, first insulating layer, conductive layer, and negative electrode. The epitaxial layer includes first and second opposing surfaces, and sidewalls connected to first and second surfaces. The ohmic contact layer is disposed on the first surface and the positive electrode connected thereto is disposed on the second surface. The first insulating layer is disposed on the second surface and extends to the ohmic contact layer along the sidewall. The conductive layer is disposed on the first insulating layer corresponding to the sidewall/sidewalls which carry power for the positive electrode.

A vertical cavity surface emitting laser (VCSEL) device and a method for manufacturing the VCSEL device without wire bonding process for the topmost positive electrode are disclosed. The device includes epitaxial layer, ohmic contact layer, positive electrode, first insulating layer, conductive layer, and negative electrode. The epitaxial layer includes first and second opposing surfaces, and sidewalls connected to first and second surfaces. The ohmic contact layer is disposed on the first surface and the positive electrode connected thereto is disposed on the second surface. The first insulating layer is disposed on the second surface and extends to the ohmic contact layer along the sidewall. The conductive layer is disposed on the first insulating layer corresponding to the sidewall/sidewalls which carry power for the positive electrode.

The invention relates to an optoelectronic module including a first semiconductor component on an installation face of a first support, a second semiconductor component, and a third semiconductor component on an installation face of a second support. The semiconductor components are designed to emit electromagnetic radiation with different main wavelengths in a common emission direction. The installation face of the first support faces the installation face of the second support. The invention additionally relates to a method for producing an optoelectronic module.

A laser light source includes: a laser diode chip including an emission layer, a substrate supporting the emission layer, and an emission end surface; a submount that includes a principal surface on which the laser diode chip is fixed and a pair of lens supports located at opposite sides with respect to the emission end surface of the laser diode chip; a lens bonded to the end surfaces of the pair of lens supports; and a semiconductor laser package housing the aforementioned elements. The laser diode chip is fixed to the submount with the emission layer being closer to the submount than is the substrate. The emission end surface of the laser diode chip is located outward with respect to an edge of the principal surface. The end surfaces of the pair of lens supports are located outward with respect to the first end surface of the laser diode chip.

A laser light source includes: a laser diode chip including an emission layer, a substrate supporting the emission layer, and an emission end surface; a submount that includes a principal surface on which the laser diode chip is fixed and a pair of lens supports located at opposite sides with respect to the emission end surface of the laser diode chip; a lens bonded to the end surfaces of the pair of lens supports; and a semiconductor laser package housing the aforementioned elements. The laser diode chip is fixed to the submount with the emission layer being closer to the submount than is the substrate. The emission end surface of the laser diode chip is located outward with respect to an edge of the principal surface. The end surfaces of the pair of lens supports are located outward with respect to the first end surface of the laser diode chip.

An external cavity tunable laser includes a gain medium module to generate a broadband optical spectrum covering a predetermined wavelength range; a collimate lens turning a diverging beam into a collimated beam; a pair of etalons to tune frequency; an actuator to adjust an external cavity optical pathlength; a bandpass filter to block one or more frequencies outside the predetermined wavelength range; a beam splitter to split a percentage of the beam to a photodetector; a reflection mirror for feedback to gain medium waveguide; an isolator for preventing reflecting light back to the external cavity; and a hermetically sealed housing less than 0.15 cubic centimeters.