Provided here are: a mounting member having a front surface on which a diffusion bonding layer is formed; an optical semiconductor element provided with a light emitting part therein, and having a rear surface on which a diffusion bonding layer is formed; and an electrode layer formed from the diffusion bonding layer and the diffusion bonding layer by diffusion bonding therebetween; wherein, in the optical semiconductor element, the light emitting part is provided near a side of the optical semiconductor element so as to be displaced toward the mounting member. This configuration not only makes unnecessary the use of a solder, an Ag paste and the like to thereby prevent the light emitting part in the optical semiconductor element from being contaminated by the solder, but also allows the light emitting part to be closer to the mounting member-side to thereby achieve improvement in heat-dissipation capability.

The present invention describes a method and apparatus for mounting a semiconductor disc laser (SDL). In particular there is described a cooling apparatus assembly (12) for mounting the semiconductor disc laser (1) the cooling apparatus assembly comprising a crystalline heat spreader (8) made of diamond, sapphire or SiC and optically contacted to the SDL (1). The apparatus further comprises a heatsink (13) made of copper and a recess (16) located on a first surface (15) of the heatsink. A pliable filler material (17) which may be In or an In alloy is provided within the recess (16) such that when a sealing plate (19) is fastened to the heatsink the SDL (1) is hermetically sealed within the recess. Hermetically sealing the SDL within the recess is found to significantly increase the lifetime of the device comprising the SDL. The heat sink (13) may be water cooled with pipes (14) delivering the water. In case the sealing plate (19) is made from for example Invar, it has an aperture (20).

In various embodiments, a laser emitter such as a diode bar is cooled during operation via jets of cooling fluid formed by ports in a cooler on which the laser emitter is positioned. The jets strike an impingement surface of the cooler that is thermally coupled to the laser emitter but prevents direct contact between the cooling fluid and the laser emitter itself.

A light source package structure is provided. The light source package structure includes a substrate, an upper electrode layer, a light emitting unit, a photodiode, a surrounding wall, a light permeable element, and a coating layer. The substrate includes a first surface and a second surface that is opposite to the first surface. The upper electrode layer is disposed on the first surface of the substrate. The light emitting unit and the photodiode both are disposed on the upper electrode layer. The surrounding wall is disposed on the first surface and is arranged to surround the light emitting unit and the photodiode. The light permeable element is disposed on the surrounding wall. The coating layer is disposed inside of the surrounding wall and is coated on a part of the first surface and a part of the upper electrode layer.

An electronic device according to a present disclosure includes a semiconductor substrate, a chip, and a connection part. The chip has a different thermal expansion rate from that of the semiconductor substrate. The connection part includes a porous metal layer for connecting connection pads that are arranged on opposing principle surfaces of the semiconductor substrate and the chip.

An electronic device according to a present disclosure includes a semiconductor substrate, a chip, and a connection part. The chip has a different thermal expansion rate from that of the semiconductor substrate. The connection part includes a porous metal layer for connecting connection pads that are arranged on opposing principle surfaces of the semiconductor substrate and the chip.

Structures and methods for reducing the thermal resistance of quantum cascade laser (QCL) devices and QCL-based photonic integrated circuits (QCL-PIC) are provided. In various embodiments, the native substrate of QCL and QCL-PIC devices is replaced with a foreign substrate that has very high thermal conductivity, for example, using wafer bonding methods. In some examples, wafer bonding of processed, semi-processed, or unprocessed QCL and QCL-PIC epilayers or devices on their native substrate to a high-thermal-conductivity substrate is performed, followed by removal of the native substrate via selective etching, and performing additional device processing if necessary. Thereafter, in some embodiments, cleaving or dicing individual devices from the bonded wafers may be performed, for example, for mounting onto heat sinks.

Structures and methods for reducing the thermal resistance of quantum cascade laser (QCL) devices and QCL-based photonic integrated circuits (QCL-PIC) are provided. In various embodiments, the native substrate of QCL and QCL-PIC devices is replaced with a foreign substrate that has very high thermal conductivity, for example, using wafer bonding methods. In some examples, wafer bonding of processed, semi-processed, or unprocessed QCL and QCL-PIC epilayers or devices on their native substrate to a high-thermal-conductivity substrate is performed, followed by removal of the native substrate via selective etching, and performing additional device processing if necessary. Thereafter, in some embodiments, cleaving or dicing individual devices from the bonded wafers may be performed, for example, for mounting onto heat sinks.

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

A method of manufacturing a semiconductor device includes: preparing a bottom plate having an upper surface and a lower surface, wherein the lower surface of the bottom plate comprises a reference part and one or more inclined surfaces that are inclined with respect to the reference part, an upper portion of the one or more inclined surfaces being positioned above the reference part, and wherein a thickness of the bottom plate at the reference part is greater than a thickness of the bottom plate at the upper portion of the one or more inclined surfaces; joining a frame member to the bottom plate, at least a part of the frame member being disposed directly above the one or more inclined surfaces, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the bottom plate.