A method of manufacturing a semiconductor device includes: preparing a bottom plate having an upper surface and a lower surface, wherein the lower surface of the bottom plate comprises a reference part and one or more inclined surfaces that are inclined with respect to the reference part, an upper portion of the one or more inclined surfaces being positioned above the reference part, and wherein a thickness of the bottom plate at the reference part is greater than a thickness of the bottom plate at the upper portion of the one or more inclined surfaces; joining a frame member to the bottom plate, at least a part of the frame member being disposed directly above the one or more inclined surfaces, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the bottom plate.

A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the semiconductor laser element.

A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the semiconductor laser element.

A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.

A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.

An optoelectronic assembly and methods of fabrication thereof are provided. The assembly includes a sub-mount, one or more micro-devices attached to the sub-mount, and a lid attached to the sub-mount. The lid includes a dispense channel and a gel groove which allows for a thermal gel to be dispensed between the lid and the micro-device in a manner that mitigates the thermal gel dispersing and/or flowing onto components of the micro-devices.

An optoelectronic assembly and methods of fabrication thereof are provided. The assembly includes a sub-mount, one or more micro-devices attached to the sub-mount, and a lid attached to the sub-mount. The lid includes a dispense channel and a gel groove which allows for a thermal gel to be dispensed between the lid and the micro-device in a manner that mitigates the thermal gel dispersing and/or flowing onto components of the micro-devices.

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

A three-dimensional (3D) sensing apparatus together with a projector subassembly is provided. The 3D sensing apparatus includes two cameras, which may be configured to capture ultraviolet and/or near-infrared light. The 3D sensing apparatus may also contain an optical filter and one or more computing processors that signal a simultaneous capture using the two cameras and processing the captured images into depth. The projector subassembly of the 3D sensing apparatus includes a laser diode, one or optical elements, and a photodiode that are useable to enable 3D capture.