A structure and method of formation of a buried heterostructure laser die with alignment aids wherein the alignment aids include lateral and vertical structures formed on the die. Lateral alignment aids are formed using a same mask layer as the ridge structure of the laser and provide fiducials that are formed in reference to the ridge structure. Vertical alignment aids, and vertical protrusions of the lateral alignment aids are formed using etch stop layers positioned in the buried heterostructure laser layer structure.

A light emitting device includes a semiconductor laser element, a base member, and a cover. The base member includes a first alignment mark, a second alignment mark, a third alignment mark, and a fourth alignment mark. The base member has a disposition surface on which the semiconductor laser element is disposed. The cover is bonded to the base member to define a closed space in which the semiconductor laser element is arranged. The first alignment mark and the second alignment mark are arranged outside the closed space. The third alignment mark and the fourth alignment mark are arranged inside the closed space. A straight line connecting the first alignment mark and the second alignment mark is parallel to a straight line connecting the third alignment mark and the fourth alignment mark.

A light emitting device includes a semiconductor laser element, a base member, and a cover. The base member includes a first alignment mark, a second alignment mark, a third alignment mark, and a fourth alignment mark. The base member has a disposition surface on which the semiconductor laser element is disposed. The cover is bonded to the base member to define a closed space in which the semiconductor laser element is arranged. The first alignment mark and the second alignment mark are arranged outside the closed space. The third alignment mark and the fourth alignment mark are arranged inside the closed space. A straight line connecting the first alignment mark and the second alignment mark is parallel to a straight line connecting the third alignment mark and the fourth alignment mark.

A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m.Math.K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m.Math.K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate including an active layer and having a first end surface and a second end surface facing each other in an optical waveguide direction; a first electrode; a second electrode; and an anti-reflection film formed on the first end surface. The semiconductor laminate is configured to oscillate laser light having a central wavelength of 7.5 μm or more. The anti-reflection film includes at least one of at least one layer of a CeO.sub.2 film formed by continuous sputtering and vacuum evaporation and a plurality of layers of CeO.sub.2 films formed by discrete sputtering and vacuum evaporation.

A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.

A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m.Math.K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m.Math.K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.