A semiconductor laser device includes: a support base having a plurality of mounting surfaces arranged in a first direction, wherein heights of the mounting surfaces from a reference plane that is parallel to the first direction decrease stepwise or gradually along the first direction; a first semiconductor laser element secured to a first mounting surface; a second semiconductor laser element secured to a second mounting surface; a first slow-axis collimator lens secured to the first mounting surface, the first slow-axis collimator lens being located at a position at which the first laser light is incident; a second slow-axis collimator lens directly or indirectly secured to the second mounting surface, the second slow-axis collimator lens being located at a position at which the second laser light is incident; and a first sealing cover that defines an inner space in which the first and second semiconductor laser elements are held.

Provided is a semiconductor laser element including: a resonator structure; and a first reflection film and a second reflection film provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively. Reflectance R of the second reflection film at a gain wavelength satisfies the following relational expression: R1≤R≤R(Oc)×C where R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power which is minimum power for the resonator structure to perform the laser oscillation, R(Oc) is reflectance of the external resonance mirror, and C is a ratio of light, which is reflected by the external resonance mirror and is incident in the resonator structure, to light which is reflected by the external resonance mirror.

A laser apparatus according to the present disclosure includes an excitation light source configured to output excitation light, a laser crystal disposed on an optical path of the excitation light, a first monitor device disposed on an optical path of transmitted excitation light after having transmitted through the laser crystal to monitor the transmitted excitation light, a temperature adjustment device configured to adjust a temperature of the excitation light source to a constant temperature based on a temperature command value, and a controller configured to change the temperature command value based on a result of monitoring by the first monitor device.

A method is for making a QCL having an InP spacer within a laser core, the QCL to provide a CW output in a high quality beam. The method may include selectively setting parameters for the QCL. The parameters may include a number of the InP spacer, a thickness for each InP spacer, a number of stages in the laser core, and a dopant concentration value in the laser core. The method may include forming the QCL based upon the parameters so that a figure of merit comprises a greatest value for a fundamental mode of operation for the QCL.

A semiconductor surface-emitting laser array can be provided with a group of independently addressable light-emitting pixels arranged in at least two rows and in a linear array on a common substrate chip and including a common cathode and a dedicated channel associated with an address trace line for each pixel. An aggregate linear pitch can be achieved between pixels of the at least two rows along the linear array in a cross process direction that is less than the size of a pixel. The semiconductor laser array can include more than one common substrate chip tiled and stitched together in a staggered arrangement to provide an at least 11-inch wide, 1200pdi imager with timing delays associated with each of the more than one common substrate chip in the staggered arrangement.

A 3D package for semiconductor thermal management can include a 3D submount forming a mechanical block including at least one embedded channel formed within the mechanical block and configured to accept cooling liquid therethrough, a first tubular connection for providing cooling liquid to the at least one embedded channel, and a second tubular connection for removing cooling liquid from the at least one embedded channel. Integrated slots can be provided for accepting and mounting semiconductor components. Mounting holes can be formed in the mechanical block for securing optical elements. At least one semiconductor laser array die can be secured to the mechanical block at the integrated slots, wherein the at least one semiconductor laser array die is kept cool by the cooling liquid flowing through the at least one embedded channel.

A wavelength conversion element according to an embodiment of the present disclosure includes: a phosphor layer including a plurality of phosphor particles; a refrigerant that cools the phosphor layer; a storage section that stores the phosphor layer and the refrigerant; and a light-transmissive section that seals the storage section in combination with the storage section, and controls an output direction of output light outputted from the phosphor layer.

A computer adapted to convert images into raw data can provide the raw data to a control interface adapted to transmit the raw data with timing information to an electronic driver circuit. The electronic driver circuit can convert the raw data with the timing information provided by a control interface into regulated current signals provided to the semiconductor laser array at 300 dpi and higher. The semiconductor array can convert the current signals into light to illuminate an imaging member. The laser array can comprise vertical cavity surface emitting lasers providing imaging greater than 300 dpi. Each semiconductor laser can operate at 50 mW or greater.

A method of transferring a semiconductor epi layer onto a metal host substrate is described. An epi layer of a semiconductor chip (e.g., semiconductor laser array) including a substrate can be mounted onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer. The backside of the substrate can be treated to substantially remove the substrate, while leaving the epi layer undamaged (e.g., by polishing to where no more than 20 micrometers of the substrate remains). Metal can be formed on the treated backside resulting in a metalized backside. The planar handle wafer can then be removed from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains. The semiconductor chip can be annealed to form a backside ohmic contact interface. The semiconductor chip can then be attached to a mechanical block by the ohmic contact interface.

In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.