Provided herein are systems and methods for switching the generation of light emissions using charge separation in a gain medium to manipulate carrier lifetimes. For a given output pulse energy, extended carrier lifetimes may allow carrier generation powers to be reduced and/or carrier generation times to be extended. L-switching of light output from a gain medium may be combined with other switching schemes utilizing different approaches to control lasing, such as Q-switching.

An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.

An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.

To prevent a decrease in oscillation efficiency of laser light and a decrease in conversion efficiency of an optical wavelength due to thermal interference. A laser element includes: a laminated semiconductor layer including a first reflection layer with respect to a first wavelength and an active layer that performs surface emission at the first wavelength; a laser medium disposed on a rear side of an optical axis of the laminated semiconductor layer and including a second reflection layer with respect to a second wavelength on a first surface facing the laminated semiconductor layer and a third reflection layer with respect to the first wavelength on a second surface on a side opposite to the first surface; a fourth reflection layer with respect to the second wavelength disposed on the second surface or disposed on a rear side of the optical axis with respect to the second surface; a first resonator that causes light of the first wavelength to resonate between the first reflection layer and the third reflection layer; a second resonator that causes light of the second wavelength to resonate between the second reflection layer and the fourth reflection layer; and a heat exhaust unit that is disposed between the laminated semiconductor layer and the laser medium and exhausts heat generated in at least one of the laminated semiconductor layer or the laser medium.

The semiconductor laser module 1 has an electrically conductive heat sink 10, a submount 20 disposed above the heat sink 10, a semiconductor laser device 30 disposed above the submount 20, a lower solder layer 50 disposed between the heat sink 10 and the submount 20, and an upper solder layer 60 electrically connected to the semiconductor laser device 30 and the heat sink 10. This upper solder layer 60 has an electric resistivity lower than an electric resistivity of the submount 20 and extends along surfaces 21 and 22 of the submount 20 to the heat sink 10.

A method of manufacturing a light emitting device includes: providing a wafer including a conductive first substrate, a laser element structure on an upper side of the first substrate, and an upper surface electrode on an upper surface of the element structure; bonding the wafer to a second substrate at an upper surface electrode side of the wafer; removing a portion of the first substrate to reduce a thickness of the wafer; forming a lower surface electrode on a lower surface of the first substrate at which the removing of the portion of the first substrate has been performed; singulating the wafer to obtain a laser element; and mounting the laser element on a submount such that the lower surface electrode faces the submount.

A pumped fluorescent light source includes a parabolic mirror that is positioned to focus pumping light from one or more pump sources on a fluorescent body. The resulting assembly provides for heat collection from a back surface of the light source for both the fluorescent body and the pumping sources in a compact package that may be hermetically sealed. The parabolic mirror has reflective surfaces disposed outside of a collection area of an output beam of the light sources, so that the collection area is not obstructed by the parabolic mirror. The light source also includes a collecting lens for collecting the light emitted by the body. The parabolic mirror focuses the stimulus light on the fluorescent body to stimulate emission. An additional parabolic mirror may be included behind the fluorescent body to focus the fluorescent emissions that do not directly enter the collection area at a point of collection.

An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.

An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.

A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.