A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.

A semiconductor laser device includes a multilayer substrate, a first conductive layer (submount) that is disposed on the multilayer substrate, a semiconductor laser element located in a first region of the first conductive layer, a first bump located on a surface of the semiconductor laser element, the surface not facing the first conductive layer, a first electrode electrically connected to the first bump, a second conductive layer located in a second region of the first conductive layer, and a second electrode electrically connected to the first conductive layer via the second conductive layer.

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

A semiconductor laser device includes first heat radiator (10) having first flow path (11) and second flow path (12) inside to allow a flow of a refrigerant and second heat radiator (20) put in contact with an upper surface of the first heat radiator. The first flow path and the second flow path are independent of each other. The second heat radiator includes an insulating member that internally has third flow path (23) communicating with first flow path (11). The semiconductor laser device further includes lower electrode block (60) disposed on a portion of an upper surface of the second heat radiator, submount (30) being made of a conductive material and being disposed on a remainder of the upper surface of second heat radiator (20), semiconductor laser element (40) disposed on an upper surface of submount (30), and upper electrode block (61) disposed such that submount (30) and semiconductor laser element (40) are clamped between the upper electrode block and second heat radiator (20). Second flow path (12) is formed below a zone for the disposition of lower electrode block (60).

An optical apparatus includes: an optical component opposed to and spaced apart from a light-emitting surface through which laser light is emitted; a case that houses a semiconductor laser element and the optical component and includes an introduction port for introducing gas and an exhaust port for exhausting the gas; and a flow passage section (i.e., a tubular body) including a spray port for spraying the semiconductor laser element with the gas introduced from the introduction port.

An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and α>β and β>0 are satisfied where α is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and β is the contact area included in a half region on the second facet side.

Semiconductor laser device (1) includes lower electrode block (10) that has a first terminal hole and first and second connection holes, upper electrode block (60) that has third connection holes communicating with the respective first connection holes and a second terminal hole, heat sink (110) that has fourth connection holes communicating with the respective second connection holes, and optical component (100) attached to upper electrode block (60). The first and the second connection holes are formed on both side of a recess that is formed to house a submount on which a semiconductor laser element is disposed. Lower electrode block (10) is disposed on heat sink (110). Lower electrode block (10) and upper electrode block (60) are fastened together with first fasteners (90, 90), whereas lower electrode block (10) and heat sink (110) are fastened together with second fasteners (91, 91).

A laser diode device includes: a first heat sink including a first mounting layer, in which the first mounting layer includes at least two mounting pads electrically isolated from one another; a second heat sink including a second mounting layer, in which the second mounting layer includes at least two mounting pads electrically isolated from one another; and a laser diode bar between the first heat sink and the second heat sink, in which a bottom electrical contact of the laser diode bar is mounted to the first mounting layer, and a top electrical contact of the laser diode bar is mounted to the second mounting layer.

Included are a metal block, a first sub-mount fixed to the metal block, and a second sub-mount having an upper surface and a lower surface which is fixed to the first sub-mount via a metal layer. Also included are an optical element mounted on the upper surface of the second sub-mount and a high frequency line path which is formed on the upper surface of the second sub-mount and electrically connected to the optical element so as to cause a signal such as a high-frequency signal to be input to or output from the optical element. In addition, the metal layer is electrically connected to the metal block.