A planar waveguide laser crystal assembly includes an optical bench and a laser crystal mount mounted on the optical bench. The laser crystal mount includes an upper housing having an interior horizontal surface and an exterior horizontal, a lower housing coupled to the upper housing and having an interior horizontal surface and an exterior horizontal surface, and a cavity defined between the interior horizontal surfaces of the upper and lower housings. A laser crystal is mounted in the cavity of the laser crystal mount. Each of the exterior horizontal surfaces of the upper and lower housings is oriented parallel to a length of the laser crystal. The laser crystal assembly further includes a heat dissipating structure thermally coupled to at least one of the exterior horizontal surfaces of the upper and lower housings to dissipate heat transferred from the laser crystal mount.

A photonic device comprises: a support layer, an optical layer extending in a main plane (x, y), subdivided into at least a first region and a second region adjacent in the main plane (x, y), and comprising a first optical waveguide in the first region and a second optical waveguide in the second region, a stack of III-V semiconductor compounds, arranged on a dielectric layer, in the first region, an intermediate layer, between the optical layer and the support layer, comprising a thermally conductive material forming a single-piece block, arranged in line with the first region and an optical and/or electrical cladding material arranged in line with the second region. A method is employed for manufacturing such a device.

A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.

A laser diode device includes: a first heat sink including a first mounting layer, in which the first mounting layer includes at least two mounting pads electrically isolated from one another; a second heat sink including a second mounting layer, in which the second mounting layer includes at least two mounting pads electrically isolated from one another; and a laser diode bar between the first heat sink and the second heat sink, in which a bottom electrical contact of the laser diode bar is mounted to the first mounting layer, and a top electrical contact of the laser diode bar is mounted to the second mounting layer.

An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and > and >0 are satisfied where is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and is the contact area included in a half region on the second facet side.

An adapter element (10) for connecting a component (4), such as a laser diode, to a heat sink (7), comprising: a first metal layer (11), which in a mounted state faces the component (4), and a second metal layer (12), which in the mounted state faces the heat sink (7), and an intermediate layer (13) comprising ceramic arranged between the first metal layer (11) and the second metal layer (12), wherein the first metal layer (11) and/or the second metal layer (12) is thicker than 40 m, preferably thicker than 70 m and more preferably thicker than 100 m.

Apparatus include a conductive block including a base surface and a plurality of parallel stepped surfaces opposite the base surface and defining respective mounting surfaces situated to receive respective laser diodes having respective thermal paths defining a common thermal path distance from the mounting surfaces to the base surface, and a two-phase cooling unit including a coupling surface attached to the base surface of the conductive block and wherein the two-phase cooling unit is situated to conduct heat generated through the emission of laser beams from the laser diodes along the thermal paths.

A method for manufacturing a semiconductor element includes: providing a nitride semiconductor layer; performing plasma treatment to at least part of a surface of the nitride semiconductor layer in an oxygen-containing atmosphere while applying bias power; after the performing of the plasma treatment, heat treating the nitride semiconductor layer in an oxygen-containing atmosphere; forming a protective film on a region of the surface of the nitride semiconductor layer where the plasma treatment was performed; and forming an electrode in a region of the surface of the nitride semiconductor layer where the protective film was not formed.

To provide an optical subassembly, an optical module, and an optical transmission equipment including simpler components. A first component with an optical semiconductor device mounted thereon that dissipates heat generated by the optical semiconductor device to outside, a second component in contact with the first component to form a box type housing, and a receptacle terminal that optically joined to the optical semiconductor device are provided, wherein the second component includes a window structure for transmitting light transmitted between the optical semiconductor device and the receptacle terminal, and the receptacle terminal is fused and fixed to the outside of the window structure.

Included are a metal block, a first sub-mount fixed to the metal block, and a second sub-mount having an upper surface and a lower surface which is fixed to the first sub-mount via a metal layer. Also included are an optical element mounted on the upper surface of the second sub-mount and a high frequency line path which is formed on the upper surface of the second sub-mount and electrically connected to the optical element so as to cause a signal such as a high-frequency signal to be input to or output from the optical element. In addition, the metal layer is electrically connected to the metal block.