A transistor outline (TO) package may include a TO cap. The TO package may include a TO header. The TO header may include a header stem of a first material and a first coefficient of thermal expansion (CTE) value. The TO header may include a header base of a second material and a second CTE value. The first material and the second material may be different. The first CTE value and the second CTE value may be different. The first CTE value and the second CTE value may be within a threshold percentage of each other.

Provided is a laser light source device which has a plurality of semiconductor laser elements arranged in an array and is provided with: a heat sink; a sub-mount substrate which is placed on one end edge of the heat sink, which has a power feed path, and on which the semiconductor laser array is mounted; an insulation plate placed in an area other than the sub-mount substrate on the heat sink; a first electrode plate mounted on the insulation plate; a second electrode plate mounted on the insulation plate separately from the first electrode plate; metal wires electrically connecting respectively between the first electrode plate and the sub-mount substrate and between the second electrode plate and the semiconductor laser array; and a cooling block on which the heat sink is mounted and which has a cooling water flow channel inside of the cooling block.

An optical transmitter with a heat dissipation structure is provided. The heat dissipation structure comprises a substrate and an optical transmitter unit. The substrate comprises a base body, a heat dissipation well disposed on the base body, and a thermal conductive block inserted into and fixed to the heat dissipation well. The thermal conductive block has on one side thereof a heat guiding plane. The optical transmitter unit comprises a heat dissipating substrate directly disposed on the heat guiding plane, and a laser diode directly disposed on the heat dissipating substrate. The laser diode features an active region whose height is lowered to shorten a heat conduction path wherein heat is transferred from the active region through the heat dissipating substrate to the heat guiding plane. The heat already transferred to the heat guiding plane is transferred horizontally by the thermal conductive block to the base body which encloses the heat dissipation well.

A transistor outline (TO) package may include a TO cap. The TO package may include a TO header. The TO header may include a header stem of a first material and a first coefficient of thermal expansion (CTE) value. The TO header may include a header base of a second material and a second CTE value. The first material and the second material may be different. The first CTE value and the second CTE value may be different. The first CTE value and the second CTE value may be within a threshold percentage of each other.

An optical transmitter with a heat dissipation structure is provided. The heat dissipation structure comprises a substrate and an optical transmitter unit. The substrate comprises a base body, a heat dissipation well disposed on the base body, and a thermal conductive block inserted into and fixed to the heat dissipation well. The thermal conductive block has on one side thereof a heat guiding plane. The optical transmitter unit comprises a heat dissipating substrate directly disposed on the heat guiding plane, and a laser diode directly disposed on the heat dissipating substrate. The laser diode features an active region whose height is lowered to shorten a heat conduction path wherein heat is transferred from the active region through the heat dissipating substrate to the heat guiding plane. The heat already transferred to the heat guiding plane is transferred horizontally by the thermal conductive block to the base body which encloses the heat dissipation well.

A shared optic assembly for combined flood and dot illumination modules is disclosed. The shared optic assembly includes a first high-powered VCSEL element for providing a flood beam and a second high-powered VCSEL element for providing a dot beam, where both the first and second VCSEL elements share the same optics and are incorporated onto the same module for space savings.

A photonic device comprises: a support layer, an optical layer extending in a main plane (x, y), subdivided into at least a first region and a second region adjacent in the main plane (x, y), and comprising a first optical waveguide in the first region and a second optical waveguide in the second region, a stack of III-V semiconductor compounds, arranged on a dielectric layer, in the first region, an intermediate layer, between the optical layer and the support layer, comprising a thermally conductive material forming a single-piece block, arranged in line with the first region and an optical and/or electrical cladding material arranged in line with the second region. A method is employed for manufacturing such a device.