According to various embodiments, there is provided an optical device including a first waveguide configured to guide a light wave along a longitudinal axis; a first grating at least partially formed in the first waveguide, the first grating arranged away from the longitudinal axis in a first direction; and a second grating at least partially formed in the first waveguide, the second grating arranged away from the longitudinal axis in a second direction; wherein the second direction is different from the first direction.

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

A light emitter includes a substrate, a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer, and a third semiconductor layer provided between the substrate and the first semiconductor layer and having the second conductivity type, in which the first semiconductor layer is provided between the third semiconductor layer and the light emitting layer, and the third semiconductor layer has a protruding/recessed structure.

In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

A method of generating a light-matter hybrid species of charged polaritons at room temperature includes providing an organic semiconductor microcavity being a doped organic semiconductor sandwiched in a microcavity capable of generating an optical resonance and coupling light to the polaron optical transition in the organic semiconductor microcavity thereby forming polaron-polaritons. The doped organic semiconductor may be a hole/electron transport material having a polaron absorption coefficient exceeding 10.sup.2 cm.sup.−1 and capable of generating a polaron optical transition with a linewidth smaller than a predetermined threshold. The optical resonance of the microcavity has a resonance frequency matched with the polaron optical transition.

A monolithic edge-emitting semiconductor diode array chip (100) comprises a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and/or a current sink connected to extract a modulated pull current through its associated diode.

A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, the plurality of emitters is disposed in substantially a honeycomb shape on the substrate, and the pad is formed on one side of the substrate adjacent to the array region.

A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, and the plurality of emitters is disposed in substantially a honeycomb shape on the substrate.

A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror having an insulation region including implanted ions and an isolation region surrounded by the insulation region, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, and a plurality of oxidation holes disposed in the isolation region and passing through the upper mirror and the aperture forming layer.

A light source module, a distance-measuring apparatus, and a mobile object. The light source module includes a first substrate, a light source disposed on the first substrate to emit light, the light source having a first terminal and a second terminal, a field-effect transistor disposed on the first substrate, the field-effect transistor having a third terminal and a fourth terminal, and a charge storage unit disposed on the first substrate, the charge storage unit having a fifth terminal and a sixth terminal. In the light source module, the first terminal and the sixth terminal are coupled to each other, the second terminal and the third terminal are coupled to each other. In the light source module, the fourth terminal and the fifth terminal are at an equivalent electrical potential. The distance-measuring apparatus includes the light source module. The includes the distance-measuring apparatus.