A light emitting device, includes a selective growth mask layer 44; a first light reflection layer 41 thinner than the selective growth mask layer 44; a laminated structure including a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, the first compound semiconductor layer 21 being formed on the first light reflection layer 41; and a second electrode 32 formed on the second compound semiconductor layer 22, and a second light reflection layer 42, in which the second light reflection layer 42 is opposed to the first light reflection layer 41, and the second light reflection layer is not formed on an upper side of the selective growth mask layer 44.

A multi-terraced structure includes three or more sections with different thicknesses and adjacent to each other in a direction in which an optical waveguide extends. An adjacent pair of the three or more sections includes one section smaller in thickness and closer to an end face of the semiconductor multilayers and another section larger in thickness and farther from the end face of the semiconductor multilayers. The three or more sections include: a first section with a smallest thickness, including the lowermost layer; a second section adjacent to the first section, including the lowermost layer and additionally a stress relief layer composed of a material equal to or lower than Au in Young's modulus; and a third section with a largest thickness, including all layers from the uppermost layer to the lowermost layer.

Provided is an optical semiconductor device including a laminate structural body 20 in which an n-type compound semiconductor layer 21, an active layer 23, and a p-type compound semiconductor layer 22 are laminated in this order. The active layer 23 includes a multiquantum well structure including a tunnel barrier layer 33, and a compositional variation of a well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is greater than a compositional variation of another well layer 31.sub.1. Band gap energy of the well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is smaller than band gap energy of the other well layer 31.sub.1. A thickness of the well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is greater than a thickness of the other well layer 31.sub.1.

The invention relates to a radiation-emitting semiconductor laser comprising—a semiconductor body comprising an active region which is designed to generate electromagnetic radiation, —a resonator which has a first end region and a second end region, and —a first sensor layer which is designed to measure the temperature of the semiconductor body, wherein the active region is located in the resonator in such a way that the electromagnetic radiation generated in the active region during operation is electromagnetic laser radiation, and —the first sensor layer is located in the first active end region of the resonator. The invention also relates to a method for operating a radiation-emitting semiconductor laser.

Provided is a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.

The present technology provides a surface emitting laser including: a first multilayer film reflector; a second multilayer film reflector; and an active layer disposed between the first multilayer film reflector and the second multilayer film reflector, in which in the first multilayer film reflector and/or the second multilayer film reflector, a high-concentration impurity region having a higher impurity concentration than other regions is partially provided in a thickness direction. According to the present technology, there is provided a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.

A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, the plurality of emitters is disposed in substantially a honeycomb shape on the substrate, and the pad is formed on one side of the substrate adjacent to the array region.

A nitride semiconductor laser element includes a nitride semiconductor stack body and a protective film. The nitride semiconductor stack body includes first and second nitride semiconductor layers and an active layer disposed between the first nitride semiconductor layer and the second nitride semiconductor layer. The nitride semiconductor stack body defines a light-emission-side end face intersecting a face of the active layer on a second nitride semiconductor layer side, and a light-reflection-side end face intersecting the face of the active layer on the second nitride semiconductor layer side. The protective film is disposed on the light-emission-side end face of the nitride semiconductor stack body. The protective film includes, in the order from the light-emission-side end face, a first film that is a crystalline film containing oxygen and aluminum and/or gallium, a second film that is a nitride crystalline film, and a third film containing aluminum and oxygen.

The present invention provides a semiconductor laser device for improving temperature characteristics of waveguide structures and realizing stable light emitting patterns and high output, and a method for making the same. The semiconductor laser device (1) comprises: an n-type clad layer (5) laminated on a substrate (2); an active layer (6) laminated on the n-type clad layer (5); a p-type clad layer (7) laminated on the active layer (6); and a plurality of waveguide structures (8) formed on the p-type clad layer (7) and having a ridge of a horn shape in top view. In this configuration, a divider (29) is formed between adjacent waveguide structures (8), and the divider (29) comprises: a groove (30) dividing the active layer (6); and a heat dissipation material (34) filled in the groove (30) and having a thermal conductivity higher than a thermal conductivity of a semiconductor layer (4).

A semiconductor laser element includes a stacked structure body, a second electrode 62, and a first electrode 61; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62B of the second electrode of at least one side structure body 72; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72, on which portions neither the second electrode nor the protection electrode 81 is formed.

A vertical cavity surface emitting laser includes: a substrate; a first mirror layer; an active layer; a second mirror layer; a current constriction layer; a first area connected to the first mirror layer and including a plurality of oxide layers; and a second area connected to the second mirror layer and including a plurality of oxide layers. The first mirror layer, the active layer, the second mirror layer, the current constriction layer, the first area, and the second area configure a laminated body. The laminated body includes a first portion, a second portion, and a third portion between the first portion and the second portion. When a width of the oxide area is W1 and a width of an upper surface of the first portion is W2, W2/W1≦3.3.