A semiconductor light-emitting element having a structure in which a substrate, a first reflector, a resonator cavity including an active layer, a second reflector and a tunnel junction portion are stacked in this sequence, comprising: a first current constriction portion configured with an oxidation constriction layer; and a second current constriction portion including the tunnel junction portion, wherein a width d2 of the second current constriction portion is smaller than a width d1 of the first current constriction portion.

A light source device in which a plurality of semiconductor light-emitting elements are disposed, each of the plurality of semiconductor light-emitting elements being configured with a first reflector, a resonator cavity including an active layer, and a second reflector which are stacked in this sequence on a semiconductor substrate, wherein in each of the semiconductor light-emitting elements, an electric contact region for supplying carriers to the active layer is disposed on a surface of the second reflector on an opposite side thereof to the active layer, and wherein the plurality of semiconductor light-emitting elements include a first semiconductor light-emitting element of which shape of the contact region is a first shape, and a second semiconductor light-emitting element of which shape of the contact region is a second shape which is different from the first shape.

Disclosed is a surface etched grating semiconductor laser with periodic pumping structure. The structure includes a lower doped dielectric layer, a multiple quantum well active layer, a ridge-shaped doped dielectric layer, periodic grating grooves formed on the ridge-shaped doped dielectric layer and a top electrical contact layer forming ohmic electrical contact with electrical contact regions between the grating grooves. Carriers are injected through the periodic electrical contact layer, flow through the electrical contact regions, spread laterally when reaching the bottom of the grating grooves, and then continue to spread to the multiple quantum well active layer. In a case of uniform distribution, a laser based on refractive index modulation is realized. In a case of non-uniform distribution, a laser with mixed modulation is realized by introducing additional gain modulation.

A vertical cavity surface emitting laser (VCSEL) may include a substrate layer, epitaxial layers on the substrate layer, and angled reflectors configured to receive an optical beam emitted toward a bottom surface of the VCSEL and redirect the optical beam through an exit window in a top surface of the VCSEL. In some implementations, the angled reflectors may be formed in the substrate layer. Additionally, or alternatively, the VCSEL may include molded optics, where the molded optics include the angled reflectors. In some implementations, the exit window may include an integrated lens.

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

A vertical-cavity surface-emitting laser (VCSEL) may include a substrate. The VCSEL may include a bottom mirror structure over the substrate. The VCSEL may include a first dilute nitride active region over the bottom mirror structure. The VCSEL may include a tunnel junction over the first dilute nitride active region. The VCSEL may include a second dilute nitride active region over the tunnel junction. The VCSEL may include a top mirror structure over the second dilute nitride active region.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that is provided on plural wires connected to the light source and holds the light diffusing member.

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.

The present disclosure relates to index guided semiconductor laser devices supporting wide single lateral mode operation for high power operation. A narrow channel ridge waveguide structure is presented which devices can be configured as single lateral multi-spectral high power semiconductor lasers, single frequency lasers, gain chips and semiconductor amplifiers. More specifically it relates to a means for increasing the lateral mode size over that of conventional index guided structures to increase the average output power typically limed by Catastrophic Optical Damage (COD) at the laser facet or by intensity related effects. This potentially allows the overall laser cavity length to be shortened for a given output power level to stabilize frequency locking with internal or external gratings to improve single frequency operation.