A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.

A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.

A laser light source may include an arrangement of surface-emitting semiconductor lasers to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser which emits radiation that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation. The emission frequency of the first semiconductor laser can be changed by changing the operating current.

[Object] To provide a vertical cavity surface emitting laser element having a structure whose pitch can be narrowed, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method of producing a vertical cavity surface emitting laser element.

[Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first substrate; and a second substrate. The first substrate is provided with a semiconductor layer including an active layer and a first distributed Bragg reflector (DBR) layer. The second substrate is provided with a constriction layer and a second DBR layer, the constriction layer having a constriction region and an injection region having conductivity higher than that of the constriction region, the second substrate being bonded to the first substrate such that the constriction layer is adjacent to the semiconductor layer.

A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

In some implementations, an optical device includes a two-zone vertical cavity surface emitting laser (VCSEL) with a set of emission zones configured to emit structured light forming a set of dots; a single-element collimating lens aligned to the two-zone VCSEL; and a tiling diffractive optical element (DOE) aligned to the single-element collimating lens, wherein the tiling DOE comprises a set of tile segments aligned to the set of emission zones, and wherein a tile segment, of the set of tile segments, is configured to project, from the set of emission zones toward portions of a target, the structured light forming the set of dots.

A surface-emitting semiconductor light-emitting device includes a first semiconductor layers, an active layer on the first semiconductor layer, a photonic crystal layer on the active layer and a second semiconductor layer on the photonic crystal layer. The photonic crystal layer include first protrusions in a first region and second protrusions in a second region. A spacing of adjacent first protrusions is greater than a spacing of adjacent second protrusions. The second semiconductor layer includes a first layer and a second layer on the first layer. The first layer covers first and second protrusions so that a first space remains between the adjacent first protrusions. The first layer includes a first portion provided between the adjacent second protrusions. The second layer includes a second portion provided between the adjacent first protrusions. The first space between the adjacent first protrusions is filled with the second portion of the second layer.

Example vertical cavity surface emitting lasers (VCSELs) include a mesa structure disposed on a substrate, the mesa structure including a first reflector, a second reflector defining at least one diameter, and an active cavity material structure disposed between the first and second reflectors; and a second contact layer disposed at least in part on top of the mesa structure and defining a physical emission aperture having a physical emission aperture diameter. The ratio of the physical emission aperture diameter to the at least one diameter is greater than or approximately 0.172 and/or the ratio of the physical emission aperture diameter to the at least one diameter is less than or approximately 0.36. An example VCSEL includes a substrate; a buffer layer disposed on a portion of the substrate; and an emission structure disposed on the buffer layer.

A ridge type semiconductor optical device includes a first conductivity type semiconductor layer including at least a first stripe section; an active layer including at least an active stripe section on the first stripe section; a second conductivity type semiconductor layer including at least a second stripe section on the active stripe section; a ridge electrode on the second stripe section; an insulation film on an end face of each of the first stripe section, the active stripe section, and the second stripe section; and a film heater on the insulation film, the film heater overlapping with the end face of at least the first stripe section.